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Full-Text Articles in Physical Sciences and Mathematics
Ab-Initio And Empirical Simulations Of Aluminum And Copper Metal, William Wolfs
Ab-Initio And Empirical Simulations Of Aluminum And Copper Metal, William Wolfs
UNLV Theses, Dissertations, Professional Papers, and Capstones
In this work, I perform detailed calculations on the bulk and electronic properties of aluminum and copper metal. Originally, I was motivated by experimental work on the solidsolid phase changes in pure aluminum. These phase changes were well predicted by density functional theory(DFT) but difficult or impossible to predict using embedded atom method potentials(EAM). EAM potentials are in wide use to describe many properties of bulk materials, and it seemed worrying that something so basic as a phase change could not be predicted. I began running high precision calculations with DFT and compared the results to EAM potentials which had …
Development And Implementation Of A Pressure-Temperature Control System For The Physical Vapor Deposition Of Copper And Niobium From A Molybdenum Filament In The Development Of Superconducting 3d Printed Rf Cavity Particle Accelerators, Chandler J. Fleuette
Honors Theses and Capstones
This report covers the development of the pressure-temperature control system used in the production of small superconducting RF cavities for particle accelerators. To test the validity of the created program, a model for the process was created and tested. The model was used to fine tune the control system before integrating it into the lab. The end goal of the control system is to measure the pressure inside of a deposition vacuum chamber, convert that pressure to a temperature, and use that temperature in tandem with a PID controller to control the current passing though a molybdenum filament which is …
Electronic Structure And Stability Of Ligated Superatoms And Bimetallic Clusters, William H. Blades
Electronic Structure And Stability Of Ligated Superatoms And Bimetallic Clusters, William H. Blades
Theses and Dissertations
Quantum confinement in small metal clusters leads to a bunching of states into electronic shells reminiscent of shells in atoms. The addition of ligands can tune the valence electron count and electron distribution in metal clusters. A combined experimental and theoretical study of the reactivity of methanol with AlnIm− clusters reveals that ligands can enhance the stability of clusters. In some cases the electronegative ligand may perturb the charge density of the metallic core generating active sites that can lead to the etching of the cluster. Also, an investigation is conducted to understand how the bonding …
Strain Relaxation In Nm-Thick Cu And Cu-Alloy Films Bonded To A Rigid Substrate, Ashley Herrmann
Strain Relaxation In Nm-Thick Cu And Cu-Alloy Films Bonded To A Rigid Substrate, Ashley Herrmann
Legacy Theses & Dissertations (2009 - 2024)
In the wide scope of modern technology, nm-thick metallic films are increasingly used as lubrication layers, optical coatings, plating seeds, diffusion barriers, adhesion layers, metal contacts, reaction catalyzers, etc. A prominent example is the use of nm-thick Cu films as electroplating seed layers in the manufacturing of integrated circuits (ICs). These high density circuits are linked by on-chip copper interconnects, which are manufactured by filling Cu into narrow trenches by electroplating. The Cu fill by electroplating requires a thin Cu seed deposited onto high-aspect-ratio trenches. In modern ICs, these trenches are approaching 10 nm or less in width, and the …
Ruco To Extend The Scalability Of Ultra-Thin Direct Plate Liners, Daniel Verne Greenslit
Ruco To Extend The Scalability Of Ultra-Thin Direct Plate Liners, Daniel Verne Greenslit
Legacy Theses & Dissertations (2009 - 2024)
In traditional semiconductor technology a sputtered copper seed layer is used to improve the adhesion, microstucture, and electromigration characteristics of electrochemically deposited (ECD) copper. The seed layer is deposited on top of a Ta/TaN stack. The Ta layer acts as an adhesion and nucleation layer for the copper seed and the TaN serves as a diffusion barrier for the Cu. As the line widths continue to shrink, scaling each of these layers becomes more difficult. It would be advantageous for the interconnect to be composed of as much copper as possible, transitioning from the traditional liner seed stack to a …
The Influence Of Copper Substrate Orientation On Graphene Growth, Zachary Robert Robinson
The Influence Of Copper Substrate Orientation On Graphene Growth, Zachary Robert Robinson
Legacy Theses & Dissertations (2009 - 2024)
This dissertation is focused on determining the influence of the copper substrate on graphene grown by \ac{CVD}. Graphene, which can be grown in single atomic layers on copper substrates, has potential applications in future electronic devices. One of the key issues for the use of graphene grown by chemical vapor deposition for device applications is the influence of defects on the transport properties of the graphene. For instance, growth on metal foil substrates results in multi-domain graphene growth because the foil substrates themselves have a variety of different surface terminations. Therefore, they don't serve as a very good template for …
Pvd Cu Trench-Fill By Viscous Flow At High Temperatures, Zhiyuan Wu
Pvd Cu Trench-Fill By Viscous Flow At High Temperatures, Zhiyuan Wu
Legacy Theses & Dissertations (2009 - 2024)
The scaling of integrated circuits has led to new challenges in Cu interconnect fabrication. It is getting difficult to fill narrow trenches, e.g. 20 nm wide, by Cu electroplating. In this work, a high temperature PVD Cu viscous flow trench fill process was explored to overcome the difficulties of filling narrow and high aspect ratio trenches.
Nucleation, Wetting And Agglomeration Of Copper And Copper-Alloy Thin Films On Metal Liner Surfaces, Stephanie Florence Labarbera
Nucleation, Wetting And Agglomeration Of Copper And Copper-Alloy Thin Films On Metal Liner Surfaces, Stephanie Florence Labarbera
Legacy Theses & Dissertations (2009 - 2024)
One of the key challenges in fabricating narrower and higher aspect ratio interconnects using damascene technology has been achieving an ultra-thin (~2 nm) and continuous Cu seed coverage on trench sidewalls. The thin seed is prone to agglomeration because of poor Cu wetting on the Ta liner. Using in-situ conductance measurements, the effect of lowering the substrate temperature during Cu seed deposition has been studied on tantalum (Ta) and ruthenium (Ru) liner surfaces. On a Ta surface, it was found that lowering the deposition temperature to -65°C increases the nucleation rate of the Cu thin film, and reduces the minimum …
Extreme Ultraviolet Polarimetry With Laser-Generated High-Order Harmonics: Characterization Of Uranium, Nicole Brimhall
Extreme Ultraviolet Polarimetry With Laser-Generated High-Order Harmonics: Characterization Of Uranium, Nicole Brimhall
Theses and Dissertations
We developed an extreme ultraviolet (EUV) polarimeter, which employs laser-generated high-order harmonics as the light source. This relatively high-flux, directional EUV source has available wavelengths between 10 nm and 47 nm with easily rotatable linear polarization. The polarimeter has allowed us to characterize the optical constants of materials that may be useful for EUV optics. The instrument has a versatile positioning system and a spectral resolution of about 180, and we have demonstrated that reflectance as low as 0.1% can be measured repeatably at EUV wavelengths. We investigate the high harmonic source used for polarimetry measurements by documenting the spatial …
Compensation And Characterization Of Gallium Arsenide, Randy A. Roush
Compensation And Characterization Of Gallium Arsenide, Randy A. Roush
Electrical & Computer Engineering Theses & Dissertations
The properties of transition metals in gallium arsenide have been previously investigated extensively with respect to activation energies, but little effort has been made to correlate processing parameters with electronic characteristics. Diffusion of copper in gallium arsenide is of technological importance due to the development of GaAs:Cu bistable photoconductive devices. Several techniques are demonstrated in this work to develop and characterize compensated gallium arsenide wafers. The material is created by the thermal diffusion of copper into silicon-doped GaAs. Transition metals generally form deep and shallow acceptors in GaAs, and therefore compensation is possible by material processing such that the shallow …