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Full-Text Articles in Physical Sciences and Mathematics
Quantum Dots In Two-Dimensional Tungsten Diselenide, Jeb Allen Michael Stacy
Quantum Dots In Two-Dimensional Tungsten Diselenide, Jeb Allen Michael Stacy
Graduate Theses and Dissertations
This work focuses on the investigation of single and double quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe_2) as a means to evaluate the valley degree of freedom as a potential qubit and ambipolar tungsten diselenide monolayers as single photon sources. Gate-defined quantum dots in monolayer and bilayer WSe_2 were fabricated and characterized. Single dot devices are gated from above and below the WSe_2 to accumulate a hole gas. Temperature dependence of Coulomb-blockade peak height is consistent with single-level transport. Excited-state transport in the quantum dot is shown for both monolayer and bilayer devices. Magnetic field dependence of …
Plasmonic Enhancement Of Photoluminescence And Photobrightening In Cdse Quantum Dots, David Alan French
Plasmonic Enhancement Of Photoluminescence And Photobrightening In Cdse Quantum Dots, David Alan French
Graduate Theses and Dissertations
Quantum dots are gaining recognition not just in the physics and chemistry community, but in the public eye as well. Quantum dot technologies are now being used in sensors, detectors, and even television displays. By exciting quantum dots with light or electricity, they can be made to emit light, and by altering the quantum dot characteristics the wavelength can be finely tuned. The light emitted can be also be made more intense by an increase in the excitation energy. The excitation light can be increased via plasmonic enhancement, leading to increased luminescence. Aside from the relatively steady-state response, quantum dots …
Near Bandgap Two-Photon Excited Luminescence Of Inas Quantum Dots, Xian Hu
Near Bandgap Two-Photon Excited Luminescence Of Inas Quantum Dots, Xian Hu
Graduate Theses and Dissertations
Semiconductor quantum dots (QDs) confine carriers in three dimensions, resulting in atomic-like energy levels as well as size-dependent electrical and optical properties. Self-assembled III-V QD is one of the most studied semiconductor QDs thanks to their well-established fabrication techniques and versatile optical properties. This dissertation presents the photoluminescence (PL) study of the InAs/GaAs QDs with both above bandgap continuous-wave excitation (one-photon excitation) and below-bandgap pulse excitation (two-photon excitation). Samples of ensemble QDs, single QD (SQD), and QDs in a micro-cavity, all grown by molecular beam epitaxy, are used in this study. Morphology of these samples was examined using atomic force …