Physical Sciences and Mathematics Commons^™

Gaas Growth On Sapphire Substrates (C And R Plane) For Integrated Microwave Photonics (Imwp), Samir Kumar Saha

Graduate Theses and Dissertations

The microwave signal processing in the optical domain creates new opportunities for information and communication technology (ICT) and networks by increasing speed, bandwidth, and processing capability. IMWP incorporates the functions of microwave photonics components/subsystems in monolithic or hybrid photonic circuits to meet future needs. Sapphire platforms have the potential to integrate all-in-one, for instance, light source, analog signal processing, light detection, CMOS control circuit, silicon on sapphire to achieve high-performance, low-cost mixed-signal optical links etc. Molecular beam epitaxy (MBE) has been used to grow GaAs on sapphire substrates to integrate optoelectronic devices in the same platform.

The initial stage of …

Growth Of Indium Nitride Quantum Dots By Molecular Beam Epitaxy, Steven P. Minor

Graduate Theses and Dissertations

Over the last decade, the evolution of the global consciousness in response to decreasing environmental conditions from global warming and pollution has led to an outcry for finding new alternative/clean methods for harvesting energy and determining ways to minimize energy consumption. III-nitride materials are of interest for optoelectronic and electronic device applications such as high efficiency solar cells, solid state lighting (LEDs), and blue laser (Blu-ray Technology) applications. The wide range of direct band gaps covered by its alloys (0.7eV-6.2eV) best illustrates the versatility of III-nitride materials. This wide range has enabled applications extending from the ultraviolet to the near …

Photoluminescence Measurement On Low-Temperature Metal Modulation Epitaxy Grown Gan, Yang Wu

Graduate Theses and Dissertations

A low-temperature photoluminescence (PL) study was conducted on low-temperature metal modulation epitaxy (MME) grown GaN. By comparing the PL signal from high temperature grown GaN buffer layers, and MME grown cap layers on top of the buffer layers, it was found that MME grown GaN cap has a significantly greater defect-related emission. The band edge PL from MME grown GaN found to be 3.51eV at low temperature. The binding energy of the exciton in GaN is determined to be 21meV through temperature dependence analysis. A PL peak at 3.29eV was found in the luminescence of the MME grown cap layer, …