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Dielectric Constant Measurements Using Atomic Force Microscopy System, Hembathanthirige Yasas Dhanapala

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A new technique to obtain local dielectric constant of thin films was developed using atomic force microscopy system. This technique, in addition to other characterization methods such as AFM imaging and X-Ray diffraction, was used to study, as an example, dielectric constant of thin films of 0.3BiScO3 - 0.7BaTiO3. The thin films were fabricated by using pulsed laser deposition technique under following temperature of the substrate: 6500C, 7000C and 7500C. At each temperature, two different oxygen pressures were used in deposition chamber: 50 mTorr and 100 mTorr. Our goal was to find optimal growth conditions with the highest dielectric constant …