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Full-Text Articles in Physical Sciences and Mathematics
Modeling Charge Diffusion From Proton-Induced Ionization Tracks In Silicon Photodiode Arrays, Lee Cole Smith
Modeling Charge Diffusion From Proton-Induced Ionization Tracks In Silicon Photodiode Arrays, Lee Cole Smith
Physics Theses & Dissertations
We are modeling the combined problem of generation and collection of charge carriers created during passage of energetic protons through a silicon photodiode array. We have also experimentally obtained pulse-height distributions of noise charge collected during exposure of a Digicon-type diode array to 21 and 75 MeV protons. It is shown that the magnitude of charge collected by a diode from each proton event is determined not only by diffusion, but by statistical considerations involving the ionization process itself. Utilizing analytical solutions to the diffusion equation for transport of minority carriers, together with the Vavilov-Landau theory of energy-loss fluctuations in …
Absorption Coefficients Of Ozone At Low Temperature In The Visible Region, Hessameddin Ghiassi
Absorption Coefficients Of Ozone At Low Temperature In The Visible Region, Hessameddin Ghiassi
Physics Theses & Dissertations
The temperature dependence of absorption coefficients of ozone was studied between 7567 Å and 4630 Å . When the gas was cooled from room temperature to -108° C, an overall increase in the absorption coefficients was noticed. The maximum increase of 5% occurred at λ = 6020 Å. In general, the absorption is linearly dependent on temperature.
Picosecond Laser Pulse Irradiation Of Crystalline Silicon, K. L. Merkle, H. Baumgart, R.H. Uebbing, F. Phillipp
Picosecond Laser Pulse Irradiation Of Crystalline Silicon, K. L. Merkle, H. Baumgart, R.H. Uebbing, F. Phillipp
Electrical & Computer Engineering Faculty Publications
Morphology changes introduced by picosecond laser pulses at λ = 532 nm and 355 nm in (111) and (100) silicon samples are studied by means of optical and high-voltage electron microscopy. Depending on energy fluence, orientation and wavelength, amorphous or highly defective regions may be created. From an analysis of damage thresholds and damage depth distributions it is concluded that melting and energy confinement precedes the formation of the structural changes.