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Ultrashort Pulse Generation In Inas Quantum Dot Semiconductors, Patrick Finch

Theses

In this thesis, the effect of operating two-section InAs quantum dot passively mode- locked semiconductor lasers in the random population regime is examined in detail in an attempt to achieve wide optical bandwidths and ultrashort optical pulses. It is demonstrated in this work that large increases in optical bandwidths can be observed in the random population regime. Random population was achieved with an undoped device by lowering the operating temperature to 20 K. An emission bandwidth of 27 nm was measured using an undoped device at 20 K, with corresponding pulses of 290 fs, shorter than any previously reported with …