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Full-Text Articles in Physical Sciences and Mathematics

The Atomic Structure Of Amorphous Oxide Semiconductors, Joe Boesso Jun 2014

The Atomic Structure Of Amorphous Oxide Semiconductors, Joe Boesso

DePaul Discoveries

Amorphous oxide semiconductors have important industrial applications in opto-electronic devices due to their transparency and high electrical conductivity. It is important to understand the arrangements of the atoms in these semiconductors since they determine the electrical properties of the materials. To investigate the atomic structure of indium oxide semiconductors, a series of nine thin films were deposited at different temperatures. Wide-angle x-ray scattering data were collected at Argonne National Laboratory. The images for the partially amorphous and fully crystalline films were calibrated, integrated, and analyzed. Structural results include the lattice parameters and positions of the atoms in the bixbyite phase. …


Cosmic Sound In The Lyman Alpha Forest, Spencer Everett, Matt Kwiecien, Cordell Newmiller Jun 2014

Cosmic Sound In The Lyman Alpha Forest, Spencer Everett, Matt Kwiecien, Cordell Newmiller

DePaul Discoveries

Using the Baryon Oscillation Spectroscopic Survey (BOSS) from the Sloan Digital Sky Survey (SDSS), the authors attempt to detect the baryonic acoustic oscillations (BAOs) using the discrete wavelet transform. The wavelet transform is used to construct the power spectrum of intergalactic clouds of matter at large (Mpc) distance scales. It was found that the wavelet transform used here does not have high enough resolution to detect the BAOs. However, the techniques used in this study allow for future improvements in the transform that could potentially resolve the expected peak in the power spectrum and indicate the existence of BAOs.


Characterization Of Electrical Performance Of Aluminum-Doped Zinc Oxide Pellets, Neel Patel Jun 2014

Characterization Of Electrical Performance Of Aluminum-Doped Zinc Oxide Pellets, Neel Patel

DePaul Discoveries

Recently, the electronic industry has been shifting towards devices that can be controlled by touching the screen with one or more fingers. This technology is made possible by using transparent conducting oxides (TCOs). Zinc oxide (ZnO) is a potential replacement for the most currently used TCO (indium-tin oxide) due to its comparable optical properties. However, the doping mechanisms of zinc oxide need to be understood and improved. The goal of this research was to prepare n-type, aluminum-doped ZnO. Several dopant percentages were studied to investigate the optimum concentration. The electrical properties for all doping levels improved compared to undoped ZnO.