Open Access. Powered by Scholars. Published by Universities.®
Physical Sciences and Mathematics Commons™
Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Physical Sciences and Mathematics
Spatial Variations In Local Switching Parameters Of Ferroelectric Random Access Memory Capacitors, D. Wu, I. Kunishima, S. Roberts, Alexei Gruverman
Spatial Variations In Local Switching Parameters Of Ferroelectric Random Access Memory Capacitors, D. Wu, I. Kunishima, S. Roberts, Alexei Gruverman
Alexei Gruverman Publications
Spatially resolved studies of the switching behavior of micrometer scale Pb(Zr,Ti)O3 capacitors have been performed by piezoresponse force microscopy (PFM). PFM spectroscopy and bias-dependent imaging of domain patterns have been used to investigate variability in local switching parameters and address the capacitor scaling effect on switching. It was found that average coercive voltage and imprint bias are independent of capacitor size and are similar to the corresponding parameters obtained by polarization hysteresis measurements. This can be attributed to the slow switching kinetics during quasistatic PFM measurements. The obtained results demonstrate a possibility of testing the submicron capacitors in real …
Nanoscale Insight Into The Statics And Dynamics Of Polarization Behavior In Thin Film Ferroelectric Capacitors, Alexei Gruverman
Nanoscale Insight Into The Statics And Dynamics Of Polarization Behavior In Thin Film Ferroelectric Capacitors, Alexei Gruverman
Alexei Gruverman Publications
In this study, we review recent advances in PFM studies of micrometer scale ferroelectric capacitors, summarize the experimental PFM-based approach to investigation of fast switching processes, illustrate what information can be obtained from PFM experiments on domains kinetics, and delineate the scaling effect on polarization reversal mechanism. Particular attention is given to PFM studies of mechanical stress effect on polarization stability.