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Full-Text Articles in Physical Sciences and Mathematics
Photoluminescence Spectra Of Silicon Doped With Cadmium, N A. Sultanov, E T. Rakhimov, Z Mirzajonov, F T. Yusupov
Photoluminescence Spectra Of Silicon Doped With Cadmium, N A. Sultanov, E T. Rakhimov, Z Mirzajonov, F T. Yusupov
Scientific-technical journal
Cadmium and zinc, as transition metals, are deep-level impurities (DL) and have a significant effect on the electrical, photoelectric, recombination, and other properties of semiconductor crystals.This paper presents the results of experimental studies of the optical and electrical properties of silicon crystals containing impurity atoms of cadmium and zinc using DLTS and low-temperature photoluminescence (PL).
Collision Of Li2+ With Li(2s) And Li(2p): Differential And Total Ionization; Discrete Excitations; Elastic Scattering, And Total Cross Section, H.R.J. Walters, Colm T. Whelan
Collision Of Li2+ With Li(2s) And Li(2p): Differential And Total Ionization; Discrete Excitations; Elastic Scattering, And Total Cross Section, H.R.J. Walters, Colm T. Whelan
Physics Faculty Publications
The coupled pseudostate approximation (McGovern et al 2009 Phys. Rev. A 79 042707) has been applied to Li2+ + Li(2s, 2p0,±1) collisions at 16 MeV with emphasis on studying the fully differential ionization measurements of Ghanbari-Adivi et al in the azimuthal plane (2017 J. Phys. B: At. Mol. Opt. Phys. 50 215202). The states of the valence electron in the Li target are calculated using the model potential of Stein (1993 J. Phys. B: At. Mol. Opt. Phys. 26 2087). Altogether 164 states with angular momenta l = 0 to 9 are employed in …
Ultrafast Laser-Induced Damage And The Influence Of Spectral Effects, Jeremy Gulley
Ultrafast Laser-Induced Damage And The Influence Of Spectral Effects, Jeremy Gulley
Jeremy R. Gulley
Numerous studies have investigated the prerequisite role of photoionization in ultrafast laser-induced damage (LID) of bulk dielectrics. This study examines the role of spectral width and instantaneous laser frequency in LID using a frequency dependent multiphoton ionization (MPI) model and numerical simulation of initially 800 nm laser pulses propagating through fused silica. Assuming a band gap of 9 eV, MPI by an 800 nm field is a six-photon process, but when the instantaneous wavelength is greater than 827 nm an additional photon is required for photoionization, reducing the probability of the event by many orders of magnitude. Simulation results suggest …
Frequency Dependence In The Initiation Of Laser-Induced Damage, Jeremy Gulley
Frequency Dependence In The Initiation Of Laser-Induced Damage, Jeremy Gulley
Jeremy R. Gulley
Numerous studies have investigated the role of photoionization in ultrafast laser-induced damage of bulk dielectrics. This study examines the role of spectral width and instantaneous laser frequency in laser-induced damage using a frequency dependent multiphoton ionization model and numerical simulation of an 800 nm laser pulse propagating through fused silica. When the individual photon wavelengths are greater than 827 nm, an additional photon is required for photoionization, reducing the probability of the event by many orders of magnitude. Simulation results suggest that this frequency dependence may significantly affect the processes of laser-induced damage and filamentation.