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Full-Text Articles in Physical Sciences and Mathematics
Free Charge Carrier Properties In Two-Dimensional Materials And Monoclinic Oxides Studied By Optical Hall Effect, Sean Knight
Free Charge Carrier Properties In Two-Dimensional Materials And Monoclinic Oxides Studied By Optical Hall Effect, Sean Knight
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
In this dissertation, optical Hall effect (OHE) measurements are used to determine the free charge carrier properties of important two-dimensional materials and monoclinic oxides. Two-dimensional material systems have proven useful in high-frequency electronic devices due to their unique properties, such as high mobility, which arise from their two-dimensional nature. Monoclinic oxides exhibit many desirable characteristics, for example low-crystal symmetry which could lead to anisotropic carrier properties. Here, single-crystal monoclinic gallium oxide, an AlInN/GaN-based high-electron-mobility transistor (HEMT) structure, and epitaxial graphene are studied as examples. To characterize these material systems, the OHE measurement technique is employed. The OHE is a physical …
Edge-Coupling Of O-Band Inp Etched-Facet Lasers To Polymer Waveguides On Soi By Micro-Transfer-Printing, Ruggero Loi, Steven Kelleher, Raja Fazan Gul, Antonio Jose Trindade, David Gomez, Liam O'Faolain, Brian Corbett, Simone Iadanza, Brendan Roycroft, James O'Callaghan, Lei Liu, Kevin Thomas, Agnieszka Gocalinska, Emanuele Pelucchi, Alexander Farrell
Edge-Coupling Of O-Band Inp Etched-Facet Lasers To Polymer Waveguides On Soi By Micro-Transfer-Printing, Ruggero Loi, Steven Kelleher, Raja Fazan Gul, Antonio Jose Trindade, David Gomez, Liam O'Faolain, Brian Corbett, Simone Iadanza, Brendan Roycroft, James O'Callaghan, Lei Liu, Kevin Thomas, Agnieszka Gocalinska, Emanuele Pelucchi, Alexander Farrell
Cappa Publications
O-band InP etched facets lasers were heterogeneously integrated by micro-transfer-printing into a 1.54~\mu \text{m} deep recess created in the 3~\mu \text{m} thick oxide layer of a 220 nm SOI wafer. A 7\times 1.5\,\,\mu \text{m}^{2} cross-section, 2 mm long multimode polymer waveguide was aligned to the ridge post-integration by e-beam lithography with < 0.7~\mu \text{m} lateral misalignment and incorporated a tapered silicon waveguide. A 170 nm thick metal layer positioned at the bottom of the recess adjusts the vertical alignment of the laser and serves as a thermal via to sink the heat to the Si substrate. This strategy shows a roadmap for active polymer waveguide-based photonic integrated circuits.