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Full-Text Articles in Physical Sciences and Mathematics
Growth Analysis Of (Ag,Cu)Inse2 Thin Films Via Real Time Spectroscopic Ellipsometry, S. A. Little, V. Ranjan, R. W. Collins, S. Marsillac
Growth Analysis Of (Ag,Cu)Inse2 Thin Films Via Real Time Spectroscopic Ellipsometry, S. A. Little, V. Ranjan, R. W. Collins, S. Marsillac
Electrical & Computer Engineering Faculty Publications
In situ and ex situ characterization methods have been applied to investigate the properties of (Ag,Cu)InSe2 (ACIS) thin films. Data acquired from real time spectroscopic ellipsometry (RTSE) experiments were analyzed to extract the evolution of the nucleating, bulk, and surface roughness layer thicknesses. The evolution of these layer thicknesses suggests a transition from Volmer-Weber to Stranski-Krastanov type behavior when Cu is replaced by Ag. The complex dielectric functions of ACIS at both deposition and room temperature as a function of film composition were also extracted from the RTSE data, enabling parameterization of the alloy optical properties.