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Articles 1 - 5 of 5
Full-Text Articles in Physical Sciences and Mathematics
Asymptotic Behavior Of Linearized Viscoelastic Flow Problem, Yinnian He, Yi Li
Asymptotic Behavior Of Linearized Viscoelastic Flow Problem, Yinnian He, Yi Li
Yi Li
In this article, we provide some asymptotic behaviors of linearized viscoelastic flows in a general two-dimensional domain with certain parameters small and the time variable large.
Asymptotic Behavior Of Linearized Viscoelastic Flow Problem, Yinnian He, Yi Li
Asymptotic Behavior Of Linearized Viscoelastic Flow Problem, Yinnian He, Yi Li
Mathematics and Statistics Faculty Publications
In this article, we provide some asymptotic behaviors of linearized viscoelastic flows in a general two-dimensional domain with certain parameters small and the time variable large.
The Signed-Graphic Representations Of Wheels And Whirls, Dan Slilaty, Hongxun Qin
The Signed-Graphic Representations Of Wheels And Whirls, Dan Slilaty, Hongxun Qin
Mathematics and Statistics Faculty Publications
We characterize all of the ways to represent the wheel matroids and whirl matroids using frame matroids of signed graphs. The characterization of wheels is in terms of topological duality in the projective plane and the characterization of whirls is in terms of topological duality in the annulus.
Connectivity In Frame Matroids, Dan Slilaty, Hongxun Qin
Connectivity In Frame Matroids, Dan Slilaty, Hongxun Qin
Mathematics and Statistics Faculty Publications
We discuss the relationship between the vertical connectivity of a biased graph Ω and the Tutte connectivity of the frame matroid of Ω (also known as the bias matroid of Ω).
Origin Of Conductive Surface Layer In Annealed Zno, David C. Look, B. Claflin, Helen Smith
Origin Of Conductive Surface Layer In Annealed Zno, David C. Look, B. Claflin, Helen Smith
Mathematics and Statistics Faculty Publications
The highly conductive surface layers found in nearly all as-grown or annealed bulk ZnO wafers are studied by temperature-dependent Hall-effect and secondary-ion mass spectroscopy (SIMS) measurements. In this work, we have used annealing in N2 at 900 degrees C, and forming gas (5% H2 in N2) at 600 degrees C, to cause a large enough surface conduction that SIMS measurements can be reliably employed. The increased near-surface donor density, as determined from two-layer Hall-effect modeling, is consistent with an increased near-surface concentration of Al, Ga, and In atoms, resulting from diffusion. There is no evidence for …