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Full-Text Articles in Physical Sciences and Mathematics
Reliability Characterization Of A Low-K Dielectric Using Its Magnetoresistance As A Diagnostic Tool, Philip Alister Williams
Reliability Characterization Of A Low-K Dielectric Using Its Magnetoresistance As A Diagnostic Tool, Philip Alister Williams
Legacy Theses & Dissertations (2009 - 2024)
The introduction of low dielectric constant materials within the integrated circuit (IC) chip technology industry was a concerted effort to decrease the resistance-capacitance (RC) time delay inherent within the dielectric materials used as insulators. This stems from a demand for greater device density per IC chip and decreased feature sizes but is fast becoming a reliability issue. Concomitant with the demand for decreased feature sizes, also in adherence with Moore’s Law (which states that the number of devices on a die doubles every two years), is a reduction in device speed and performance due to device intra-level interconnection signal delays. …
Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon For Generation Of Spin-Polarized Carriers, Machara Krishna Girish Malladi
Exploring Magnetic Nanostructures Embedded Within Single-Crystal Silicon For Generation Of Spin-Polarized Carriers, Machara Krishna Girish Malladi
Legacy Theses & Dissertations (2009 - 2024)
Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. …
Magnetoresistance Of A Low-K Dielectric, Brian Thomas Mcgowan
Magnetoresistance Of A Low-K Dielectric, Brian Thomas Mcgowan
Legacy Theses & Dissertations (2009 - 2024)
Low-k dielectrics have been incorporated into advanced computer chip technologies as a part of the continuous effort to improve computer chip performance. One drawback associated with the implementation of low-k dielectrics is the large leakage current which conducts through the material, relative to silica. Another drawback is that the breakdown voltage of low-k dielectrics is low, relative to silica [1]. This low breakdown voltage makes accurate reliability assessment of the failure mode time dependent dielectric breakdown (TDDB) in low-k dielectrics critical for the successful implementation of these materials. The accuracy with which one can assess this reliability is currently a …
Temperature Dependence Of Anisotropic Magnetoresistance In Antiferromagnetic Sr2Iro4, C. Wang, H. Seinige, Gang Cao, J.-S. Zhou, J. B. Goodenough, M. Tsoi
Temperature Dependence Of Anisotropic Magnetoresistance In Antiferromagnetic Sr2Iro4, C. Wang, H. Seinige, Gang Cao, J.-S. Zhou, J. B. Goodenough, M. Tsoi
Center for Advanced Materials Faculty Publications
Temperature-dependent magnetotransport properties of the antiferromagnetic semiconductor Sr2IrO4 are investigated with point-contact devices. The point-contact technique allows to probe very small volumes and, therefore, to look for electronic transport on a microscopic scale. Point-contact measurements with single crystals of Sr2IrO4 were intended to see whether the additional local resistance associated with a small contact area between a sharpened Cu tip and the antiferromagnet shows magnetoresistance (MR) such as that seen in bulk crystals. Point-contact measurements at liquid nitrogen temperature revealed large MRs (up to 28%) for modest magnetic fields (250 mT) applied within an …
Effect Of Tip Resonances On Tunnelling Anisotropic Magnetoresistance In Ferromagnetic Break Junctions: A First-Principles Study, John D. Burton, Renat F. Sabirianov, Julian P. Velev, O. N. Mryasov, Evgeny Y. Tsymbal
Effect Of Tip Resonances On Tunnelling Anisotropic Magnetoresistance In Ferromagnetic Break Junctions: A First-Principles Study, John D. Burton, Renat F. Sabirianov, Julian P. Velev, O. N. Mryasov, Evgeny Y. Tsymbal
Materials Research Science and Engineering Center: Faculty Publications
First-principles calculations of electron tunneling transport in nanoscale Ni and Co break-junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance TAMR. An important aspect of this phenomenon stems from resonant states localized in the electrodes near the junction break. The energy and broadening of these states is strongly affected by the magnetization orientation due to spin-orbit coupling, causing TAMR to be sensitive to bias voltage on a scale of a few millivolts. Our results bear a resemblance to recent experimental data and suggest that TAMR driven by resonant states is a …
The Effect Of Cu-Doping On The Magnetic And Transport Properties Of La₀.₇Sr₀.₃Mno₃, M. S. Kim, Jinbo Yang, Qingsheng Cai, X.-D. Zhou, William B. Yelon, Paul Ernest Parris, William Joseph James
The Effect Of Cu-Doping On The Magnetic And Transport Properties Of La₀.₇Sr₀.₃Mno₃, M. S. Kim, Jinbo Yang, Qingsheng Cai, X.-D. Zhou, William B. Yelon, Paul Ernest Parris, William Joseph James
Physics Faculty Research & Creative Works
The effects of Cu-doping on the structural, magnetic, and transport properties of La0.7Sr0.3Mn1xCuxO3 (0<=x<=0.20) have been studied using neutron diffraction, magnetization, and magnetoresistance (MR) measurements. All samples show the rhombohedral structure with the R[overline 3]c space-group from 10 K to room temperature (RT). Neutron diffraction data suggest that some of the Cu ions have a Cu3+ state in these compounds. The substitution of Mn by Cu affects the MnO bond length and Mn-O-Mn bond angle resulting from the minimization of the distortion of the MnO6 octahedron. Resistivity measurements show that a metal to insulator transition occurs for the x>=0.15 samples. The x=0.15 sample shows the highest MR([approximate]80%), which might result from the co-existence of Cu3-Cu2+ and the dilution effect of Cu-doping on the double exchange interaction