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Articles 1 - 9 of 9

Full-Text Articles in Physical Sciences and Mathematics

Unfolding The High Energy Electron Flux From Crres Fluxmeter Measurements, Brian D. Mckellar Dec 1996

Unfolding The High Energy Electron Flux From Crres Fluxmeter Measurements, Brian D. Mckellar

Theses and Dissertations

The Combined Release and Radiation Effects Satellite (CRRES) was launched on 25 July 1990 to collect measurements in the earth's radiation belts. One instrument, the High Energy Electron Fluxmeter (HEEF), measured the flux of electrons in 10 channels with energies between 1 MeV and 10 MeV. The channel sensitivities, Ri(E), have been calibrated and partially re-calibrated. We explore the errors introduced in unfolding the electron flux spectrum from the channel measurements and the propagation and growth of calibration and measurement errors. Using numerical experimentation, we fold the responses with known spectra to obtain simulated measurements, add random measurement and calibration …


Luminescence Study Of Ion-Implanted Gallium Nitride, Eric Silkowski Nov 1996

Luminescence Study Of Ion-Implanted Gallium Nitride, Eric Silkowski

Theses and Dissertations

Luminescence and absorption measurements were used to demonstrate the efficacy of ion implantation for introducing various classes of dopants into GaN. A wide range of implantation and annealing studies were performed with several dopant species (Ar, Zn, C, O, Si, Be, Mg, Nd, Er). Room temperature ion implantation was performed on MOCVD- and MBE-grown GaN samples at energies between 100 and 1150 keV with doses ranging from 1 x 1013 to 1 x 1015/cm-2. Conventional furnace annealing in flowing NH3 or N2 gas resulted in good implantation damage recovery at an annealing temperature …


Two-Dimensional Drift-Diffusion Simulations Of Silicon Avalanche Shaper (Sas) Devices For High Power Applications, Hamid Jalali Jul 1996

Two-Dimensional Drift-Diffusion Simulations Of Silicon Avalanche Shaper (Sas) Devices For High Power Applications, Hamid Jalali

Electrical & Computer Engineering Theses & Dissertations

Silicon Avalanche Shaper devices have been projected as being important components of an inexpensive, semiconductor-based technology for high power switching applications. The primary advantage of this technology is that it is based on Silicon material which is easy to fabricate and has a well established processing technology. Unlike other high power technologies, the SAS devices do not rely on external optical triggering which eliminates the need for lasers and related optical circuitry.

The SAS based high power switching technology has been pioneered and tested by a Russian group. Though preliminary results have been very encouraging, the device reliability and its …


Построение Редуцированного Физического Гамильтониана Для Сферически-Симметричной Гравитации, Николай Заркевич Jun 1996

Построение Редуцированного Физического Гамильтониана Для Сферически-Симметричной Гравитации, Николай Заркевич

Nikolai A. Zarkevich

No abstract provided.


Electronic Origins Of Ordering In Multicomponent Metallic Alloys: Application To The Cu-Ni-Zn System, J. D. Althoff, Duane D. Johnson, F. J. Pinski, J. B. Staunton Apr 1996

Electronic Origins Of Ordering In Multicomponent Metallic Alloys: Application To The Cu-Ni-Zn System, J. D. Althoff, Duane D. Johnson, F. J. Pinski, J. B. Staunton

Duane D. Johnson

We investigate the ordering tendencies of the fcc Cu-Ni-Zn system using a recently developed first-principles, density-functional-based theory of atomic short-range order (ASRO) in disordered substitutional alloys of an arbitrary number of components. We find for the binary alloys a variety of effects which should lead to competition in the ternaries: commensurate ordering (Ni-Zn), long-period ordering (Cu-rich Cu-Zn), and clustering (Cu-Ni), in agreement with experiment. We calculate the ASRO of various disordered ternary alloys (as described by the Warren-Cowley pair-correlation function) and discuss its relationship to the electronic structure of the binary and ternary disordered alloys. We find [100]-type ASRO over …


Wavelength Modulation Spectroscopy With Diode Lasers, Ying Lu Apr 1996

Wavelength Modulation Spectroscopy With Diode Lasers, Ying Lu

Electrical & Computer Engineering Theses & Dissertations

Wavelength Modulation Spectroscopy is a non-intrusive technique which enables several parameters such as concentration, velocity, and temperature of a target specie to be measured. The method involves a modulation of a probe laser beam and detection at the fundamental, or any harmonic frequency, by a phase-sensitive apparatus. The theory of wavelength modulation is discussed. Effects of the finite value of the wavelength modulation index, together with the effects of any residual amplitude modulation that often occurs simultaneously in a diode laser, are included. It is shown that there are several advantages in using detection harmonics orders greater than the second. …


An Electroabsorption Study Of Porous Silicon, Melanie Fewings Apr 1996

An Electroabsorption Study Of Porous Silicon, Melanie Fewings

WWU Honors College Senior Projects

Bulk silicon is an indirect band gap material. When carriers are injected into bulk silicon, electron-hole recombination takes place thermally via phonon exchange, and not by emission of photons. Porous silicon, on the other hand, is a fairly efficient emitter of light in the visible region. Much research is currently under way to find out what makes porous silicon able to emit light. One main theory suggests that the energy bands of bulk silicon may be "squeezed" by being quantum confined, and porous silicon is just an array of quantum silicon wires. Another possibility is that defects in the huge …


Electron Beam Emission From A Ferroelectric Cathode, Crystal Briana Garland Apr 1996

Electron Beam Emission From A Ferroelectric Cathode, Crystal Briana Garland

Electrical & Computer Engineering Theses & Dissertations

The electron beam emission from a LTZ-2 (lead titanate-zirconate) ferroelectric cathode was characterized. The purpose was to determine the operation range for this type of electron emitter. The experimental apparatus consisted of a high voltage driving circuit with a charging voltage up to 30kV. A solid-state SCR switch is used to generate the high voltage pulse which induces a polarization change. Current densities on the order of 80A/cm2 30kV were achieved. The electron beam profile is Guassian. At long anode-cathode distances the measured current densities were found to be above Child-Langmuir space charge limits. The large current densities and …


Frequency Response Enhancement Of A Flow Sensor Using Diamond Thin Films Synthesized By Plasma Cvd, John Curren Hagwood Apr 1996

Frequency Response Enhancement Of A Flow Sensor Using Diamond Thin Films Synthesized By Plasma Cvd, John Curren Hagwood

Electrical & Computer Engineering Theses & Dissertations

Theoretical modeling conducted previously in our Microelectronics Laboratory has shown that a layer of diamond film inserted between a metal film and a substrate will enhance the frequency response of a conventional thin film flow sensor. This thesis involved fabricating and testing a conventional thin film sensor of nickel on quartz (Ni/Q) and a diamond enhanced sensor (Ni/D/Q) for comparative frequency response analysis to validate the theory. Diamond films were grown onto quartz substrates using a microwave plasma enhanced chemical vapor deposition process. Conditions were established to synthesize continuous diamond films on quartz substrates. These films were characterized by scanning …