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Physical Sciences and Mathematics Commons™
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- Boltzmann equation (2)
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Articles 1 - 4 of 4
Full-Text Articles in Physical Sciences and Mathematics
Characterization Of Laser-Generated Aluminum Plasma Using Ion Time-Of-Flight And Optical Emission Spectroscopy, Md. Haider A. Shaim, Hani E. Elsayed-Ali
Characterization Of Laser-Generated Aluminum Plasma Using Ion Time-Of-Flight And Optical Emission Spectroscopy, Md. Haider A. Shaim, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Laser plasma generated by ablation of an Al target in vacuum is characterized by ion time-of-flight combined with optical emission spectroscopy. A Q-switched Nd:YAG laser (wavelength λ = 1064 nm, pulse width τ ∼ 7 ns, and fluence F ≤ 38 J/cm2) is used to ablate the Al target. Ion yield and energy distribution of each charge state are measured. Ions are accelerated according to their charge state by the double-layer potential developed at the plasma-vacuum interface. The ion energy distribution follows a shifted Coulomb-Boltzmann distribution. Optical emission spectroscopy of the Al plasma gives significantly lower plasma temperature …
Nanostructure Evolution Of Magnetron Sputtered Hydrogenated Silicon Thin Films, Dipendra Adhikari, Maxwell M. Junda, Sylvain X. Marsillac, Robert W. Collins, Nikolas J. Podraza
Nanostructure Evolution Of Magnetron Sputtered Hydrogenated Silicon Thin Films, Dipendra Adhikari, Maxwell M. Junda, Sylvain X. Marsillac, Robert W. Collins, Nikolas J. Podraza
Electrical & Computer Engineering Faculty Publications
Hydrogenated silicon (Si:H) thin films have been prepared by radio frequency (RF) magnetron sputtering. The effect of hydrogen gas concentration during sputtering on the resultant film structural and optical properties has been investigated by real time spectroscopic ellipsometry (RTSE) and grazing incidence x-ray diffraction (GIXRD). The analysis of in-situ RTSE data collected during sputter deposition tracks the evolution of surface roughness and film bulk layer thickness with time. Growth evolution diagrams depicting amorphous, nanocrystalline and mixed-phase regions for low and high deposition rate Si:H are constructed and the effects of process parameter (hydrogen gas concentration, total pressure and RF power) …
Perspective: The Physics, Diagnostics, And Applications Of Atmospheric Pressure Low Temperature Plasma Sources Used In Plasma Medicine, M. Laroussi
Electrical & Computer Engineering Faculty Publications
Low temperature plasmas have been used in various plasma processing applications for several decades. But it is only in the last thirty years or so that sources generating such plasmas at atmospheric pressure in reliable and stable ways have become more prevalent. First, in the late 1980s, the dielectric barrier discharge was used to generate relatively large volume diffuse plasmas at atmospheric pressure. Then, in the early 2000s, plasma jets that can launch cold plasma plumes in ambient air were developed. Extensive experimental and modeling work was carried out on both methods and much of the physics governing such sources …
Aluminum Multicharged Ion Generation From Femtosecond Laser Plasma, Md. Haider A. Shaim, Frederick Guy Wilson, Hani E. Elsayed-Ali
Aluminum Multicharged Ion Generation From Femtosecond Laser Plasma, Md. Haider A. Shaim, Frederick Guy Wilson, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Aluminum multicharged ion generation from femtosecond laser ablation is studied. A Ti:sapphire laser (wavelength 800 nm, pulse width ∼100 fs, and maximum laser fluence of 7.6 J/cm2) is used. Ion yield and energy distribution of each charge state are measured. A linear relationship between the ion charge state and the equivalent acceleration energy of the individual ion species is observed and is attributed to the presence of an electric field within the plasma-vacuum boundary that accelerates the ions. The ion energy distribution follows a shifted Coulomb-Boltzmann distribution. For Al1+ and Al2+, the ion energy distributions …