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Physical Sciences and Mathematics Commons™
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Full-Text Articles in Physical Sciences and Mathematics
Structure And Optical Properties Of Transition Metal Dichalcogenides (Tmds) – Mx2 (M = Mo, W & X = S, Se) Under High Pressure And High Temperature Conditions, Nirup Reddy Bandaru
Structure And Optical Properties Of Transition Metal Dichalcogenides (Tmds) – Mx2 (M = Mo, W & X = S, Se) Under High Pressure And High Temperature Conditions, Nirup Reddy Bandaru
UNLV Theses, Dissertations, Professional Papers, and Capstones
Layered structured materials such as transition metal dichalcogenides (TMDs) have gained immense interest in recent times due to their exceptional structural, electrical and optical properties. Recent studies show semiconducting TMDs such as MX2 (M= Mo, W & X = S, Se) could be used as potential shock absorbing material, which has resulted in extensive studies on structural stability of these materials under the influence of high pressure. Understanding the structural stability of transition metal dichalcogenides (TMDs) such as MoS2, MoSe2, WS2, and WSe2 under high pressure has been very challenging due to contradicting observations and interpretations reported in the …
Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez
Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez
Open Access Theses & Dissertations
Cadmium Telluride is a material widely used in terrestrial thin film photovoltaic applications due to its nearly ideal band gap (~1.5 eV) and high absorption coefficient. Due to its low manufacturing cost, this technology has the potential to become a significant energy resource if higher energy conversion efficiencies are achieved. However, the module efficiencies (~14%) are still far from the theoretical maximum (~30%) for this material in a single junction configuration. The reason behind this low performance is attributed to the high number of defects that are present within the device materials. The physics behind the formation mechanisms of these …