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Full-Text Articles in Physical Sciences and Mathematics
Degenerate Parallel Conducting Layer And Conductivity Type Conversion Observed From P-Ge1 - YSnY (Y = 0.06%) Grown On N-Si Substrate, Mee-Yi Ryu, Yung Kee Yeo, M. Ahoujja, Thomas R. Harris, Richard T. Beeler, John Kouvetakis
Degenerate Parallel Conducting Layer And Conductivity Type Conversion Observed From P-Ge1 - YSnY (Y = 0.06%) Grown On N-Si Substrate, Mee-Yi Ryu, Yung Kee Yeo, M. Ahoujja, Thomas R. Harris, Richard T. Beeler, John Kouvetakis
Faculty Publications
Electrical properties of p-Ge1−ySny (y = 0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge1−ySny/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge1−ySny layer below 50 K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370 K for this sample. A two-layer conducting model was used …
Using Modeling And Simulation To Examine The Benefits Of A Network Tasking Order, Matthew D. Compton, Kenneth M. Hopkinson, Gilbert L. Peterson, James T. Moore
Using Modeling And Simulation To Examine The Benefits Of A Network Tasking Order, Matthew D. Compton, Kenneth M. Hopkinson, Gilbert L. Peterson, James T. Moore
Faculty Publications
The Global Information Grid (GIG) is the military’s computer and communications network which supports the myriad of military missions. Military missions are highly planned, passing through many hands in the strategy-to-task methodology to ensure completeness, accuracy, coordination, cohesion, and appropriateness. A benefit of this planning is the possibility to collect knowledge of future conditions that could be of use to network designers whose goals include optimizing and protecting the GIG. This advanced knowledge includes which networked military equipment will be involved, what their capabilities are, where they will be, when they will be there, and particulars on the required data …
Design And Analysis Of A Dynamically Configured Log-Based Distributed Security Event Detection Methodology, Michael R. Grimaila, Justin Myers, Robert F. Mills, Gilbert L. Peterson
Design And Analysis Of A Dynamically Configured Log-Based Distributed Security Event Detection Methodology, Michael R. Grimaila, Justin Myers, Robert F. Mills, Gilbert L. Peterson
Faculty Publications
Military and defense organizations rely upon the security of data stored in, and communicated through, their cyber infrastructure to fulfill their mission objectives. It is essential to identify threats to the cyber infrastructure in a timely manner, so that mission risks can be recognized and mitigated. Centralized event logging and correlation is a proven method for identifying threats to cyber resources. However, centralized event logging is inflexible and does not scale well, because it consumes excessive network bandwidth and imposes significant storage and processing requirements on the central event log server. In this paper, we present a flexible, distributed event …
Low-Loss Meta-Atom For Improved Resonance Response, Derrick Langley, Ronald Coutu Jr., Peter J. Collins
Low-Loss Meta-Atom For Improved Resonance Response, Derrick Langley, Ronald Coutu Jr., Peter J. Collins
Faculty Publications
Measurements of a meta-atom integrated with a low noise amplifier into the split-ring resonator are presented. A comparison is made between baseline meta-atoms and one integrated with a GaAs low noise amplifier. S-parameter measurements in a RF strip-line show the resonant frequency location. The resonance null is more prominent for the integrated meta-atom. Biasing the low noise amplifier from 0 to 7 VDC showed that the resonant null improved with biasing voltage. As the biasing voltage increases, the transmission null reduced from -11.82 to -23.21 dB for biases from 0 to 7 VDC at resonant frequency.
Measurement Of Semiconductor Surface Potential Using The Scanning Electron Microscope, Jennifer T. Heath, Chun-Sheng Jiang, Mowafak M. Al-Jassim
Measurement Of Semiconductor Surface Potential Using The Scanning Electron Microscope, Jennifer T. Heath, Chun-Sheng Jiang, Mowafak M. Al-Jassim
Faculty Publications
We calibrate the secondary electron signal from a standard scanning electron microscope to voltage, yielding an image of the surface or near-surface potential. Data on both atomically abrupt heterojunction GaInP/GaAs and diffused homojunction Si solar cell devices clearly show the expected variation in potential with position and applied bias, giving depletion widths and locating metallurgical junctions to an accuracy better than 10 nm. In some images, distortion near the p-n junction is observed, seemingly consistent with the effects of lateral electric fields (patch fields). Reducing the tube bias removes this distortion. This approach results in rapid and straightforward collection of …