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Electrical and Computer Engineering

Electrons

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Full-Text Articles in Physical Sciences and Mathematics

Increasing The Longevity Of Tungsten Filaments In A Zone Refiner, Byron D. Greenlee May 2018

Increasing The Longevity Of Tungsten Filaments In A Zone Refiner, Byron D. Greenlee

Senior Theses

Zone refining is used for its ability to purify material and grow single crystals. To produce these single crystals, a suspended molten zone, generated by electron bombardment, passes along the polycrystalline stock. During a zone refining run, the filaments that produce the electron bombardment can fail. In this project, the longevity of tungsten filaments in a zone refiner was investigated. A new bombardment geometry was constructed to attempt to increase the longevity of the filaments. The new geometry had a shield machined into it to prevent line-of-sight impurities originating in the molten zone from striking the filaments. It was found …

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Triplet Ground State Of The Neutral Oxygen-Vacancy Donor In Rutile Tio2, A. T. Brant, Eric M. Golden, Nancy C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A. Tryk, A. Manivannan, Larry E. Halliburton Mar 2014

Triplet Ground State Of The Neutral Oxygen-Vacancy Donor In Rutile Tio2, A. T. Brant, Eric M. Golden, Nancy C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A. Tryk, A. Manivannan, Larry E. Halliburton

Faculty Publications

Electron paramagnetic resonance (EPR) is used to investigate the triplet (S = 1) ground state of the neutral oxygen vacancy in bulk rutile TiO2 crystals. This shallow donor consists of an oxygen vacancy with two nearest-neighbor, exchange-coupled 3+ ions located along the [001] direction and equidistant from the vacancy. The spins of the two trapped electrons, one at each 3+ ion, align parallel to give the S = 1 state. These neutral oxygen vacancies are formed near 25 K in as-grown oxidized TiO2 crystals by illuminating with sub-band-gap 442 nm laser light. The angular dependence of the EPR …

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A Long-Channel Model For The Asymmetric Double-Gate Mosfet Valid In All Regions Of Operation, Abhishek Kammula, Bradley Minch Jul 2012

A Long-Channel Model For The Asymmetric Double-Gate Mosfet Valid In All Regions Of Operation, Abhishek Kammula, Bradley Minch

Bradley Minch

We present a physically based, continuous analytical model for long-channel double-gate MOSFETs. The model is particularly well suited for implementation in circuit simulators due to the simple expressions for the current andthe continuous nature of the derivatives of the current which improves convergence behavior.

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Electron Multipactor: Theory Review, Comparison And Modeling Of Mitigation Techniques In Icepic, Neil G. Rogers Mar 2009

Electron Multipactor: Theory Review, Comparison And Modeling Of Mitigation Techniques In Icepic, Neil G. Rogers

Theses and Dissertations

Mitigation approaches for single surface multipactor at dielectric windows are investigated using Particle-In-Cell (PIC) simulations. Initially baseline susceptibility diagrams are constructed analytically and compared with self-consistent, dynamic system trajectories. The power deposited on the surface of a dielectric window in an HPM system is considered using three different methods and the results of PIC simulations. Geometric mitigation is then considered by varying the window orientation with respect to the HPM electric held. Small angular deviations, less than 20 degrees, from the nominal case of normal incidence show dramatic changes in the susceptibility diagram. A materials approach to mitigation is then …

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