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Full-Text Articles in Physical Sciences and Mathematics
Colloidal Quantum Dot (Cqd) Based Mid-Wavelength Infrared Optoelectronics, Shihab Bin Hafiz
Colloidal Quantum Dot (Cqd) Based Mid-Wavelength Infrared Optoelectronics, Shihab Bin Hafiz
Dissertations
Colloidal quantum dot (CQD) photodetectors are a rapidly emerging technology with a potential to significantly impact today’s infrared sensing and imaging technologies. To date, CQD photodetector research is primarily focused on lead-chalcogenide semiconductor CQDs which have spectral response fundamentally limited by the bulk bandgap of the constituent material, confining their applications to near-infrared (NIR, 0.7-1.0 um) and short-wavelength infrared (SWIR, 1-2.5 um) spectral regions. The overall goal of this dissertation is to investigate a new generation of CQD materials and devices that advances the current CQD photodetector research toward the technologically important thermal infrared region of 3-5 ?m, known as …
Design, Layout, And Testing Of Sige Apds Fabricated In A Bicmos Process, Dane Laurence Gentry
Design, Layout, And Testing Of Sige Apds Fabricated In A Bicmos Process, Dane Laurence Gentry
UNLV Theses, Dissertations, Professional Papers, and Capstones
This Thesis is concerned with the design, layout, and testing of avalanche photodiodes (APDs). APDs are a type of photodetector and, thus, convert light signals into electrical signals (current or voltage). APDs can be fabricated using silicon (Si). In this Thesis, however, three integrated circuit (IC) chips containing various silicon-germanium (SiGe) APDs with different sizes, structures, and geometries were designed, laid out, and fabricated using the Austriamicrosystems (AMS) 0.35μm SiGe BiCMOS (S35) process. This was done in order to compare SiGe APDs to Si only APDs and investigate the hypothesis that SiGe APDs are capable of detecting longer wavelengths than …
Interactive Physics And Characteristics Of Photons And Photoelectrons In Hyperbranched Zinc Oxide Nanostructures, Garrett Edward Torix
Interactive Physics And Characteristics Of Photons And Photoelectrons In Hyperbranched Zinc Oxide Nanostructures, Garrett Edward Torix
Graduate Theses and Dissertations
As is commonly known, the world is full of technological wonders, where a multitude of electronic devices and instruments continuously help push the boundaries of scientific knowledge and discovery. These new devices and instruments of science must be utilized at peak efficiency in order to benefit humanity with the most advanced scientific knowledge. In order to attain this level of efficiency, the materials which make up these electronics, or possibly more important, the fundamental characteristics of these materials, must be fully understood. The following research attempted to uncover the properties and characteristics of a selected family of materials. Herein, zinc …
Fabrication Of Infrared Photodetectors Utilizing Lead Selenide Nanocrystals, Justin Anthony Hill
Fabrication Of Infrared Photodetectors Utilizing Lead Selenide Nanocrystals, Justin Anthony Hill
Graduate Theses and Dissertations
Colloidal lead selenide and lead selenide / lead sulfide core/shell nanocrystals were grown using a wet chemical synthesis procedure. Absorbance and photoluminescence measurements were made to verify the quality of the produced nanocrystals. Absorbance spectra were measured at room temperature, while photoluminescence spectra were measured at 77 K. Organic ligands were exchanged for shorter ligands in order to increase the conductivity of the nanocrystals. Absorption and PL spectra for both core and core/shell nanocrystals were compared. Interdigital photodetector devices with varying channel widths were fabricated by depositing gold onto a glass substrate. Lead selenide nanocrystals were deposited onto these metallic …
Growth And Characterization Of Zno Based Semiconductor Materials And Devices, Ming Wei
Growth And Characterization Of Zno Based Semiconductor Materials And Devices, Ming Wei
Electronic Theses and Dissertations
Wide band gap semiconductors such as MgxZn1-xO represent an excellent choice for making optical photodetectors and emitters operating in the UV spectral region. High crystal and optical quality MgxZn1-xO thin films were grown epitaxially on c-plane sapphire substrates by plasma-assisted Molecular Beam Epitaxy. ZnO thin films with high crystalline quality, low defect and dislocation densities, and sub-nanometer surface roughness were achieved by applying a low temperature nucleation layer. The critical growth conditions were discussed to obtain a high quality film: the sequence of Zn and O sources for initial growth of nucleation layer, growth temperatures for both ZnO nucleation and …