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Full-Text Articles in Physical Sciences and Mathematics
Ballistic-Ohmic Quantum Hall Plateau Transition In A Graphene P-N Junction, Tony Low
Ballistic-Ohmic Quantum Hall Plateau Transition In A Graphene P-N Junction, Tony Low
Birck and NCN Publications
Recent quantum Hall experiments conducted on disordered graphene p-n junction provide evidence that the junction resistance could be described by a simple Ohmic sum of the n and p mediums’ resistances. However in the ballistic limit, theory predicts the existence of chirality-dependent quantum Hall plateaus in a p-n junction. We show that two distinctively separate processes are required for this ballistic-Ohmic plateau transition, namely, (i) hole/electron Landau states mixing and (ii) valley isospin dilution of the incident Landau edge state. These conclusions are obtained by a simple scattering theory argument, and confirmed numerically by performing ensembles of quantum magnetotransport calculations …
Electronic Transport Properties Of A Tilted Graphene P-N Junction, Tony Low, Joerg Appenzeller
Electronic Transport Properties Of A Tilted Graphene P-N Junction, Tony Low, Joerg Appenzeller
Birck and NCN Publications
Spatial manipulation of current flow in graphene could be achieved through the use of a tilted p-n junction. We show through numerical simulation that a pseudo-Hall effect (i.e., nonequilibrium charge and current density accumulating along one of the sides of a graphene ribbon) can be observed under these conditions. The tilt angle and the p-n transition length are two key parameters in tuning the strength of this effect. This phenomenon can be explained using classical trajectory via ray analysis, and is therefore relatively robust against disorder. Lastly, we propose and simulate a three terminal device that allows direct experimental access …