Physical Sciences and Mathematics Commons^™

Synthesis And Characterization Of Silicon Dioxide Thin Films By Plasma Enhances Chemical Vapor Deposition From Diethylsilane And Nitrous Oxide, Lan Chen

Theses

This study is focused on the synthesis and characterization of silicon dioxide thin films deposited on silicon wafers by plasma enhanced chemical vapor deposition(PECVD), using diethylsilane (DES) as a precursor and nitrous oxide (N₂O) as the oxidant. The process parameters, such as temperature, pressure and reactant gas composition have been systematically varied and their effects on the film growth rate and properties were investigated. The growth rate was found to be inversely proportional to the temperature in the examined range of 100-300°C. It increased with increasing N₂O/DES flow rate ratio as the total flow rate increased …