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Optical Investigation Of Transition Metal Implanted Wide Band Gap Semiconductors, Brian P. Feller

Theses and Dissertations

Thin films of GaN, Al_0.1Ga_0.9N, and ZnO were implanted with Cr, Mn, and nickel Ni to produce dilute magnetic semiconductors. Optical and magnetic techniques were used to evaluate crystal structure restoration and coercive field strength as a function of implant species and annealing temperature. Maximum crystal restoration was obtained for Al_0.1Ga_0.9N after annealing at 675 °C; for Cr implanted p-GaN after annealing at 750 °C; for Mn or Ni implanted p-GaN after annealing at 675 °C; for Cr implanted ZnO after annealing at 700 °C; for Mn implanted ZnO after annealing at …