Open Access. Powered by Scholars. Published by Universities.®

Physical Sciences and Mathematics Commons

Open Access. Powered by Scholars. Published by Universities.®

Analytical Chemistry

PDF

Chinese Chemical Society | Xiamen University

Journal

1997

Articles 1 - 2 of 2

Full-Text Articles in Physical Sciences and Mathematics

The Electrode Process Of Some Organic Dyes Studied By Spectroelec Tro Chemical Technique In Situ, Yinxuan Tang, Hangsheng Yang, Baoen Shen Aug 1997

The Electrode Process Of Some Organic Dyes Studied By Spectroelec Tro Chemical Technique In Situ, Yinxuan Tang, Hangsheng Yang, Baoen Shen

Journal of Electrochemistry

Spectroelectrochemistry especially with in situ measurement in a cell provides a very useful mthodology for measuring the parameters of electrode process. In this paper, we report the determination of formal potentials, the number of electron transfer, the diffusion coefficient, the heterogeneous electron transfer rate constant and the transfer coefficient of some organic dyes (Methyelene blue, Neutral red, Indigo carmine) using spectroelectro chemical technique in situ.


Effects Of Tunneling Electrons And Local Field On Nanometer Region Solid / Liquid Interfacial Reactions ——Potential Controlled Stm Induced Nanoscale Modification Of H Terminated Si(111) Surfaces, Zhaoxiong Cai Xiongwei Xie, Caihui Shi, Bingwei Mao, Zhaowu Tian May 1997

Effects Of Tunneling Electrons And Local Field On Nanometer Region Solid / Liquid Interfacial Reactions ——Potential Controlled Stm Induced Nanoscale Modification Of H Terminated Si(111) Surfaces, Zhaoxiong Cai Xiongwei Xie, Caihui Shi, Bingwei Mao, Zhaowu Tian

Journal of Electrochemistry

H terminated n Si(111) surface was found to be etched in 0.5% HF solution in nanometer scale while scanning the STM tip when the substrate potential was somehow lower than the open circuit potential at tunneling condition of V b=+1.0 V (tip positive), I t=1 nA. Much more stable Si surface was achievable at potentials much more negative than the open circuit potential (such as 500 mV negative to OCP) under the same tunneling condition. Furthermore, the etching rete at less negative potential was found to be somehow related to the tunneling current. These results indicate that the STM induced …