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Full-Text Articles in Life Sciences
Monte Carlo Calculations For Electron Microscopy, Microanalysis, And Microlithography, David F. Kyser
Monte Carlo Calculations For Electron Microscopy, Microanalysis, And Microlithography, David F. Kyser
Scanning Electron Microscopy
The methodology of Monte Carlo simulation for electron scattering and energy dissipation in solid targets is reviewed. The basic concepts of single and multiple elastic scattering models are compared, and the continuous energy loss model for inelastic scattering is discussed. Some new developments in Monte Carlo simulation are reviewed, including improvements in the elastic scattering model and discrete models for inelastic scattering. A variety of practical applications of Monte Carlo calculations in the fields of electron microscopy, electron probe microanalysis, and electron beam lithography are reviewed. The Monte Carlo computer program listings available in the literature are also described.
Electron Beam Induced Chemistry Of Lithographic Materials, Jacob Pacansky, Adolfo Gutierrez, Richard Kroeker
Electron Beam Induced Chemistry Of Lithographic Materials, Jacob Pacansky, Adolfo Gutierrez, Richard Kroeker
Scanning Electron Microscopy
Experimental apparatus has been designed to study the solid state electron beam chemistry of lithographic materials. Thin organic films are simultaneously analyzed in situ with several different spectroscopic tools throughout the electron beam exposure. The equipment has enabled us to determine, in situ, the reaction paths for product formation when organic films are irradiated with high energy (25 keV) electron beams. In addition, cross sections for the electron beam chemistry are defined by monitoring the changes in optical absorption for a molecular species as a function of incident electron beam dose; these are very useful for providing a direction for …
Monte Carlo Simulation Of Electron Scattering In Resist Film/Substrate Targets, Kenji Murata
Monte Carlo Simulation Of Electron Scattering In Resist Film/Substrate Targets, Kenji Murata
Scanning Electron Microscopy
First the fundamentals of resist modelling required to implement an analysis of developed resist patterns were studied, which represents the relationship between the energy deposited by incident electrons and the solubility characteristics of a positive or negative resist. Next, two models of single elastic scattering and fast secondary (knock-on) electron production were studied for Monte Carlo simulation of electron scattering in resist film/substrate targets, and the statistical errors of Monte Carlo results were evaluated. Finally, problems in electron beam lithography were investigated with the simulation. The exposure intensity distribution was studied with the two models. A comparison between Monte Carlo …
Monte Carlo Simulation Of Spatial Resolution Limits In Electron Beam Lithography, David F. Kyser
Monte Carlo Simulation Of Spatial Resolution Limits In Electron Beam Lithography, David F. Kyser
Scanning Electron Microscopy
Computer simulation of high energy primary electron scattering and subsequent generation of "fast" secondary electrons in thin film targets is demonstrated with Monte Carlo techniques. The hybrid model of Murata et al. (1981) is utilized to calculate the generation and subsequent spatial trajectory of each secondary electron in the target. The 3-dimensional spatial distribution of energy dissipation by such "fast" secondary electrons is shown to be the fundamental resolution limit for electron beam lithography with high-voltage beams (100 keV) and thin film polymer targets. The dependence of resolution on beam voltage and film thickness is presented, and quantitative comparison is …