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Full-Text Articles in Life Sciences
Light Scattering And Electron Microscopy Study Of The Surface Morphology Of Gaas Films Grown By Molecular Beam Epitaxy, M. K. Nissen, C. Lavoie, S. Eisebitt, T. Pinnington, T. Tiedje
Light Scattering And Electron Microscopy Study Of The Surface Morphology Of Gaas Films Grown By Molecular Beam Epitaxy, M. K. Nissen, C. Lavoie, S. Eisebitt, T. Pinnington, T. Tiedje
Scanning Microscopy
The surface morphology of thermally quenched GaAs films grown by molecular beam epitaxy on GaAs substrates has been studied by elastic light scattering, by scanning electron microscopy and by scanning tunneling microscopy (STM) in air. STM shows that the oxide-desorbed surface of GaAs is pitted, but smooths after deposition of a few hundred nanometers of material. Light scattering shows that, after the surface has smoothed, the power spectral density of the surface approaches a q-2 dependence on spatial frequency over the spatial frequency range 0.2 μm-1 < q < 20 μm-1 that is accessible to the light scattering measurements at 488 nm. …
Znse Heteroepitaxial Growth On Si (100) And Gaas (100), D. K. Biegelsen, R. D. Bringans, J. E. Northrup, L. -E. Swartz
Znse Heteroepitaxial Growth On Si (100) And Gaas (100), D. K. Biegelsen, R. D. Bringans, J. E. Northrup, L. -E. Swartz
Scanning Microscopy
The early stages of ZnSe heteroepitaxy on Si(100), Si(100):As and GaAs(100) are compared and contrasted, based on results of scanning tunneling microscopy and photoemission spectroscopy. High Se reactivity with the substrate constituents leads to bulk phase formation which is detrimental to heteroepitaxy. As-termination of Si(100) not only passivates the surface, but also provides an ideal buffer for ZnSe overgrowth. Lacking a similar buffer layer, stoichiometric control of the GaAs(100) surface is investigated to find a means for controlled heteroepitaxy.
Chemical Composition Of Gaas Oxide Layers By Auger In-Depth Profiles And X-Ray Photoelectron Spectroscopy Experiments, J. F. Bresse, C. Cardinaud
Chemical Composition Of Gaas Oxide Layers By Auger In-Depth Profiles And X-Ray Photoelectron Spectroscopy Experiments, J. F. Bresse, C. Cardinaud
Scanning Microscopy
GaAs oxide layers resulting from an oxygen plasma etching have been studied by Auger in-depth profiles and angle-resolved XPS experiments. From the Auger profiles, using the sequential layer sputtering (SLS) treatment, a quantitative determination of thickness and composition of the oxide layers has been performed. A model with several layers has been deduced. From the angle-resolved X-ray photoelectron spectroscopy (XPS) experiments, another model with several layers of different chemical compounds has also been deduced. The oxide layer is non-uniform in thickness and composition. Two or three different oxide layers are formed depending on the probed area. The interface layer is …