Life Sciences Commons^™

Transit Time Effect On Voltage Contrast In The Stroboscopic Scanning Electron Microscope, K. Nakamae, H. Fujioka, K. Ura

Scanning Microscopy

Voltage contrast varies if the specimen voltage changes within the secondary electron transit time through the specimen electric field. This effect would affect the time resolution in stroboscopic scanning electron microscopy. The method to calculate the transit time effect that was described in a previous paper is reviewed. The calculated results agreed well with the experiment in which a specially designed specimen is used to estimate the applied voltage as exactly as possible.

The Versatility Of Scanning Electron Microscopy In Thin Film Device Analysis, D. J. Drake, W. G. Hawkins, R. W. Anderson

Scanning Microscopy

The versatility of scanning electron microscopy is shown for many stages of fabrication of thin film transistor driver matrices for actively addressed liquid crystal displays. Electron channeling and Schottky barrier charge collection modes allow rapid assessment of silicon crystal quality. The secondary electron mode allows examination of conductor lead crossover integrity. A form of voltage contrast is used on the completed array to monitor performance of the array prior to liquid crystal filling.

Developments In Voltage Contrast, P. Girard

Scanning Microscopy

The aim of this paper is to give a review of the main steps that have led to voltage contrast equipment available to day for integrated circuit testing.

The main parameters related to quantitative voltage evaluations are discussed in the case of measurements on integrated circuits metal stripes as well as on buried lines. They concern the reduction of the local field effects, the voltage resolution improvements on the energy analysers, and the time resolution. Results concerning the E-beam perturbation of MOS circuits are reported. Due to the test conditions and the presence of additional elements inside the microscope column …

Advanced Scanning Electron Microscopy Methods And Applications To Integrated Circuit Failure Analysis, E. I. Cole Jr., C. R. Bagnell Jr., B. G. Davies, A. M. Neacsu, W. V. Oxford, R. H. Propst

Scanning Microscopy

Semiconductor device failure analysis using the scanning electron microscope (SEM) has become a standard component of integrated circuit fabrication. Improvements in SEM capabilities and in digital imaging and processing have advanced standard acquisition modes and have promoted new failure analysis methods. The physical basis of various data acquisition modes, both standard and new, and their implementation on a computer controlled SEM image acquisition/processing system are discussed, emphasizing the advantages of each method. Design considerations for an integrated, online failure analysis system are also described. Recent developments in the integration of the information provided by electron beam analysis, conventional integrated circuit …