Life Sciences Commons^™

A Quantitative Technique For Determining The Mass-Fractions Of Authigenic And Detrital K-Feldspar In Mineral Separates, Paul P. Hearn Jr.

Scanning Microscopy

In studies involving radiometric, isotopic, or chemical analyses of authigenic potassium feldspar (K-feldspar), suitable samples are usually available only in the form of authigenic overgrowths on detrital igneous or metamorphic grains. The analysis of these mixtures often requires a measurement of the relative proportion of each component. To address this need, a technique has been developed which utilizes backscattered-electron (BSE) and cathodoluminescence (CL) detectors together with an image analyzer to quantify the relative proportions of authigenic and detrital K-feldspar in monomineralic separates. Authigenic (low temperature) K-feldspar overgrowths are distinguished from high temperature K-feldspar cores by their lack of luminescence. Computer …

The Use Of Electron Microscopic Methods For The Characterization Of Paints In Forensic Science, R. Goebel, W. Stoecklein

Scanning Microscopy

Apart from the conventional methods for investigating paints in the forensic science laboratory the electron microscope gives many additional types of information. Since the materials for coating objects are produced in large quantities, a merely chemical analysis of paint does not lead to individual identification. Therefore it is necessary to demonstrate morphological peculiarities, such as e.g., features and defects of fabrication. So the material will have to be evaluated by microanalysis and cathodoluminescence, too. Additionally the pigments and extending materials, especially in primers, can be described by transmission electron microscopy. In that way one can obtain information about the distribution …

Theory Of Electron Beam Induced Current And Cathodoluminescence Contrasts From Structural Defects Of Semiconductor Crystals; Steady-State And Time-Resolved Problems, A. Jakubowicz

Scanning Microscopy

Electron-beam-induced current and cathodoluminescence are powerful tools for revealing and characterizing point-like defects, dislocations, and grain boundaries in semiconductor crystals.

This paper reviews the theoretical studies of electron-beam-induced current and cathodoluminescence contrasts from local structure defects of semiconductor crystals (the geometrical aspects of both contrasts, the assessment of the defect properties from the contrast, the evaluation of bulk parameters in the presence of defects, and time-resolved characterization of defects), including recent developments in this area.