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Investigation Of Dislocations In Gaas Using Cathodoluminescence In The Scanning Electron Microscope, K. L. Pey, J. C. H. Phang, D. S. H. Chan

Scanning Microscopy

Electrically active dislocations in Si-doped {100} GaAs substrates were observed using the cathodoluminescence (CL) technique in the scanning electron microscope (SEM). CL contrast profiles were experimentally obtained from the dislocations at different beam energies. Based on the CL model for localized defects in semiconductors developed earlier by Pey, the depths of the dislocations were found by locating the beam energy at which maximum CL contrast occurred. A preferential etching technique for {100} GaAs was employed to reveal the dislocations and to measure their depths. The etched depths obtained were compared to the predicted results from the theoretical model developed. The …

The Present Status Of Cathodoluminescence Attachments For Optical Microscopes, Donald J. Marshall

Scanning Microscopy

The serious use of cathodoluminescence (CL) in petrography began about 30 years ago with the electron microprobe analyzer. Investigators soon began to use simpler instruments mounted directly on optical microscopes - cathodoluminescence microscope attachments (CMAs).

A major advantage of the CMA, compared to a scanning electron microscope (SEM) or electron microprobe analyzer (EMPA), is the capability to switch quickly between CL observations and high quality conventional optical microscope observations. Beam currents available in the CMA are higher than in the SEM or EMPA and one sees an instantaneous real time true color display of the CL pattern.

CMAs are based …