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Full-Text Articles in Life Sciences
Low Energy Electron Diffraction With Microscopic Resolution, J. Kirschner, T. Ichinokawa, Y. Ishikawa, M. Kemmochi, N. Ikeda, Y. Hosokawa
Low Energy Electron Diffraction With Microscopic Resolution, J. Kirschner, T. Ichinokawa, Y. Ishikawa, M. Kemmochi, N. Ikeda, Y. Hosokawa
Scanning Electron Microscopy
We report on the development of a Scanning Low Energy Diffraction Microscope, operating in the range of 250 to 1000 eV primary energy. By discriminating against inelastically scattered electrons, low energy electron diffraction (LEED) patterns are obtained from areas of about 100 nm in size. By selecting a particular diffracted beam dark-field images of the surface structure are obtained in the scanning mode. Examples are given for polycrystalline Si and clean and adsorbate covered Si (111) surfaces.
Charging Effects In Low-Voltage Scanning Electron Microscope Metrology, M. Brunner, R. Schmid
Charging Effects In Low-Voltage Scanning Electron Microscope Metrology, M. Brunner, R. Schmid
Scanning Electron Microscopy
Low voltage operation of the scanning electron microscope is being increasingly used to avoid negative charging in e-beam inspection and metrology. Positive charging effects, however, may still disturb the measurement accuracy even with low primary beam energies. Current investigations have revealed that no errors due to positive charging occur on resist structures on semiconductor substrates. But samples with metal structures on insulating substrates do involve disturbing effects due to positive charging. The difference in behavior between these groups of samples is attributed to the fundamental difference between insulator and conductor charging. This difference is due to different field geometries on …
Data Acquisition And Processing Techniques For Voltage Contrast Measurements, F. A. Dibianca, D. G. Johnson, C. R. Bagnell, E. I. Cole, W. V. Oxford, R. H. Propst, C. A. Smith
Data Acquisition And Processing Techniques For Voltage Contrast Measurements, F. A. Dibianca, D. G. Johnson, C. R. Bagnell, E. I. Cole, W. V. Oxford, R. H. Propst, C. A. Smith
Scanning Electron Microscopy
The effects of several data acquisition techniques on the accuracy of voltage contrast measurements are studied. In particular, the effect of using a voltage reference region directly connected to an external voltage source in performing the image intensity-to-voltage mapping of a node whose voltage is to be determined is examined. This is found to allow improved voltage measurement. The actual reference curves were obtained by least squares fitting the measured intensity-voltage reference data alternately to a quadratic and a cubic function. In addition, various mapping algorithms are considered including ones based alternately on the use of unprocessed, subtracted and normalized …