Life Sciences Commons^™

Low Energy Electron Diffraction With Microscopic Resolution, J. Kirschner, T. Ichinokawa, Y. Ishikawa, M. Kemmochi, N. Ikeda, Y. Hosokawa

Scanning Electron Microscopy

We report on the development of a Scanning Low Energy Diffraction Microscope, operating in the range of 250 to 1000 eV primary energy. By discriminating against inelastically scattered electrons, low energy electron diffraction (LEED) patterns are obtained from areas of about 100 nm in size. By selecting a particular diffracted beam dark-field images of the surface structure are obtained in the scanning mode. Examples are given for polycrystalline Si and clean and adsorbate covered Si (111) surfaces.

Charging Effects In Low-Voltage Scanning Electron Microscope Metrology, M. Brunner, R. Schmid

Scanning Electron Microscopy

Low voltage operation of the scanning electron microscope is being increasingly used to avoid negative charging in e-beam inspection and metrology. Positive charging effects, however, may still disturb the measurement accuracy even with low primary beam energies. Current investigations have revealed that no errors due to positive charging occur on resist structures on semiconductor substrates. But samples with metal structures on insulating substrates do involve disturbing effects due to positive charging. The difference in behavior between these groups of samples is attributed to the fundamental difference between insulator and conductor charging. This difference is due to different field geometries on …

Data Acquisition And Processing Techniques For Voltage Contrast Measurements, F. A. Dibianca, D. G. Johnson, C. R. Bagnell, E. I. Cole, W. V. Oxford, R. H. Propst, C. A. Smith

Scanning Electron Microscopy

The effects of several data acquisition techniques on the accuracy of voltage contrast measurements are studied. In particular, the effect of using a voltage reference region directly connected to an external voltage source in performing the image intensity-to-voltage mapping of a node whose voltage is to be determined is examined. This is found to allow improved voltage measurement. The actual reference curves were obtained by least squares fitting the measured intensity-voltage reference data alternately to a quadratic and a cubic function. In addition, various mapping algorithms are considered including ones based alternately on the use of unprocessed, subtracted and normalized …

A High Efficiency Cathodoluminescence System And Its Application To Optical Materials, A. D. Trigg

Scanning Electron Microscopy

A high collection efficiency spectroscopic cathodoluminescence (CL) system based on an in-line ellipsoidal mirror has been constructed for use on a Cambridge S250 scanning electron microscope (SEM). It can be fitted to or removed from the SEM in about 30 minutes and requires no significant modification of the instrument. It can be used to obtain total CL images, monochromatic CL images or CL spectra with an ultimate spectral resolution of 1 nm.

The system has been applied to the study of doped synthetic quartz crystals, optical fibres and optical fibre preforms, and to yttrium aluminium garnet, bismuth silicon oxide and …

Divergent-Beam X-Ray Diffraction In The Scanning Electron Microscopy And Its Use For The Study Of The Semiconductor Epitaxial Layers, J. Hejna

Scanning Electron Microscopy

Among the X-ray techniques belonging to the family of Kassel methods the divergent-beam diffraction method gives the best contrast for semiconductor specimens.

The technique has been accomplished in the scanning electron microscope (SEM) in a back reflection configuration. Epitaxial layers of GaAsSb and GaAsSbP on GaAs [100] oriented substrates were investigated. The diffraction lines from lattice planes giving only high Bragg angles were used. For the purpose of the layer strain analysis, the diffraction experiments were carried out for specimens placed horizontally (the lines {711} type recorded) and for tilted 45° (the lines {551) type recorded). A Cu foil was …