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Electron Detectors For Electron-Beam Testing Of Ultra Large Scale Integrated Circuits, S. C. J. Garth, D. F. Spicer

Scanning Electron Microscopy

The increasing density of components in integrated circuits imposes severe constraints on conventional electron beam testers. The use of electron detectors consisting of combined electrostatic and magnetic fields has demonstrated improved performance over conventional electrostatic detectors. Such detectors also ease many of the practical difficulties associated with electron beam testing of Ultra Large Scale Integration (ULSI) circuits. A detector using a single pole magnetic lens will be described and compared to detectors which use only electrostatic fields. The single pole lens detector has demonstrated superior performance to the electrostatic detector in terms of local field error and imaging resolution, allowing …

Computer Simulation And Experimental Performance Data For An Electron Spectrometer For Electron Beam Testing Of Integrated Circuits, D. Deutges, S. Görlich, E. Kubalek

Scanning Electron Microscopy

Electron beam testing using voltage contrast in the scanning electron microscope has been established as a useful tool for nondestructive and nonloading functional testing and failure analysis of integrated circuits (IC). The accuracy of quantitative voltage measurements within the IC with the electron beam probe is determined by the performance of the secondary electron (SE) spectrometer used.

For simulating the performance of SE-spectrometers a program-package has been developed by aid of which the voltage-and field-distributions within the spectrometers can be evaluated using a finite element method. Thus it is possible to trace electron trajectories throughout the spectrometer. By considering a …