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Electroluminescence Studies On Longwavelength Indium Arsenide Quantum Dot Microcavities Grown On Gallium Arsenide, John C. Ramsey
Electroluminescence Studies On Longwavelength Indium Arsenide Quantum Dot Microcavities Grown On Gallium Arsenide, John C. Ramsey
Theses and Dissertations
A comprehensive study of the electroluminescence of four GaAs/AlGaAs microcavity devices with InAs/GaInAs quantum dot active regions emitting near 1.3 µm was conducted. The four molecular beam epitaxial grown samples with AlAs oxide aperture confinement layers were fabricated, characterized, and optically modeled. Optical power transmission of the samples was modeled using Matlab and compared with measured transmission data. Resonant cavity light emitting diodes (RCLEDs) and three vertical cavity surface emitting laser (VCSEL) samples were fabricated and electro-optically characterized over a range of injection currents and temperatures. Devices achieved continuous wave room temperature lasing at 1.28 µm with an output power …