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Full-Text Articles in Engineering
Free Charge Carrier Properties In Two-Dimensional Materials And Monoclinic Oxides Studied By Optical Hall Effect, Sean Knight
Free Charge Carrier Properties In Two-Dimensional Materials And Monoclinic Oxides Studied By Optical Hall Effect, Sean Knight
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
In this dissertation, optical Hall effect (OHE) measurements are used to determine the free charge carrier properties of important two-dimensional materials and monoclinic oxides. Two-dimensional material systems have proven useful in high-frequency electronic devices due to their unique properties, such as high mobility, which arise from their two-dimensional nature. Monoclinic oxides exhibit many desirable characteristics, for example low-crystal symmetry which could lead to anisotropic carrier properties. Here, single-crystal monoclinic gallium oxide, an AlInN/GaN-based high-electron-mobility transistor (HEMT) structure, and epitaxial graphene are studied as examples. To characterize these material systems, the OHE measurement technique is employed. The OHE is a physical …
Gamma-Ray Radiation Effects In Graphene-Based Transistors With H-Bn Nanometer Film Substrates, E. J. Cazalas, Michael R. Hogsed, S. R. Vangala, Michael R. Snure, John W. Mcclory
Gamma-Ray Radiation Effects In Graphene-Based Transistors With H-Bn Nanometer Film Substrates, E. J. Cazalas, Michael R. Hogsed, S. R. Vangala, Michael R. Snure, John W. Mcclory
Faculty Publications
Radiation effects on graphene field effect transistors (GFETs) with hexagonal boron nitride (h-BN) thin film substrates are investigated using 60Co gamma-ray radiation. This study examines the radiation response using many samples with varying h-BN film thicknesses (1.6 and 20 nm thickness) and graphene channel lengths (5 and 10 μm). These samples were exposed to a total ionizing dose of approximately 1 Mrad(Si). I-V measurements were taken at fixed time intervals between irradiations and postirradiation. Dirac point voltage and current are extracted from the I-V measurements, as well as mobility, Dirac voltage hysteresis, and the total number of GFETs that remain …
Transparent Actuator Made With Few Layer Graphene Electrode And Dielectric Elastomer, For Variable Focus Lens, Taeseon Hwang, Hyeok-Yong Kwon, Joon-Suk Oh, Jung-Pyo Hong, Seung-Chul Hong, Youngkwan Lee, Hyouk Ryeo Choi, Kwang J. Kim, Mainul Hossain Bhuiya, Jae Do Nam
Transparent Actuator Made With Few Layer Graphene Electrode And Dielectric Elastomer, For Variable Focus Lens, Taeseon Hwang, Hyeok-Yong Kwon, Joon-Suk Oh, Jung-Pyo Hong, Seung-Chul Hong, Youngkwan Lee, Hyouk Ryeo Choi, Kwang J. Kim, Mainul Hossain Bhuiya, Jae Do Nam
Mechanical Engineering Faculty Research
A transparent dielectric elastomer actuator driven by few-layer-graphene (FLG) electrode was experimentally investigated. The electrodes were made of graphene, which was dispersed inN-methyl-pyrrolidone. The transparent actuator was fabricated from developed FLG electrodes.The FLG electrode with its sheet resistance of 0.45 kΩ/sq (80 nm thick) was implemented to mask silicone elastomer. The developed FLG-driven actuator exhibited an optical transparency of over 57% at a wavenumber of 600 nm and produced bending displacement performance ranging from 29 to 946 μm as functions of frequency and voltage. The focus variation was clearly demonstrated under actuation to study its application-feasibility in …