Engineering Commons^™

Analysis And Modeling Of Polysilicon Critical Dimensions, Jasper P. Munson

Journal of the Microelectronic Engineering Conference

The objective of the project was to evaluate polysilicon CD etch bias as it was affected by etch time, measurement feature within the exposure field, and the product being measured. Characterization of the trends has generated a summarizing model that uses etch time, measurement feature, and product type as significant factors in determining polysilicon CD etch bias. Etch time was found to be a continuous factor, while measurement site and product type were categorical. Measurement Site A was found to be independent of measurement Site B, independent of Site C, etc., as well as Product 1 was found independent of …

Design And Analysis Of A Cmos Based Mems Accelerometer, Matthew A. Zeleznik

Journal of the Microelectronic Engineering Conference

Traditionally, microelectromechanical systems (MEMS) have been fabricated using standard surface micromachining or bulk micromachining processes with prior or subsequent CMOS incorporation. Recently, a new hybrid technique known as CMOS enicromachining has been developed allowing for parallel fabrication of mechanical and electrical components. A single axis and dual axis accelerometer have been designed for submission for an ASIMPS alpha run using the CMOS micromachining process. Electrical and mechanical analysis and simulations for the single axis accelerometer have been performed. The sensitivity of the single axis accelerometer has been calculated to be 19.66mV/g neglecting the effects of parasitic capacitance. The released die …

Surface Charge Analysis (Sca) Of 300 Angstrom Thermally Grown Oxides, Briand D. Handel

Journal of the Microelectronic Engineering Conference

As the microelectronic industry progresses toward smaller devices, a decrease in the thickness of gate oxides accompanies them. High quality cannot be sacrificed as a result of this shrinkage. It is believed that oxide quality can be related to oxide charge density. Total oxide charge is related to a shift in Vt for transistors and believed to be related to oxide breakdown strength.

A surface charge analyzer on loan from the SemiTest Corp. was used to quantify oxide charge densities after thermal oxidation of 300 A oxides under various processing conditions. Variations to the base process included the temperature at …