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Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip

Dissertations

Light-emitting diodes (LEDs) using III-nitride nanowire heterostructures have been intensively studied as promising candidates for future phosphor-free solid-state lighting and full-color displays. Compared to conventional GaN-based planar LEDs, III-nitride nanowire LEDs exhibit numerous advantages including greatly reduced dislocation densities, polarization fields, and quantum-confined Stark effect due to the effective lateral stress relaxation, promising high efficiency full-color LEDs. Beside these advantages, however, several factors have been identified as the limiting factors for further enhancing the nanowire LED quantum efficiency and light output power. Some of the most probable causes have been identified as due to the lack of carrier confinement in …