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Full-Text Articles in Engineering
Gamma-Ray Radiation Effects In Graphene-Based Transistors With H-Bn Nanometer Film Substrates, E. J. Cazalas, Michael R. Hogsed, S. R. Vangala, Michael R. Snure, John W. Mcclory
Gamma-Ray Radiation Effects In Graphene-Based Transistors With H-Bn Nanometer Film Substrates, E. J. Cazalas, Michael R. Hogsed, S. R. Vangala, Michael R. Snure, John W. Mcclory
Faculty Publications
Radiation effects on graphene field effect transistors (GFETs) with hexagonal boron nitride (h-BN) thin film substrates are investigated using 60Co gamma-ray radiation. This study examines the radiation response using many samples with varying h-BN film thicknesses (1.6 and 20 nm thickness) and graphene channel lengths (5 and 10 μm). These samples were exposed to a total ionizing dose of approximately 1 Mrad(Si). I-V measurements were taken at fixed time intervals between irradiations and postirradiation. Dirac point voltage and current are extracted from the I-V measurements, as well as mobility, Dirac voltage hysteresis, and the total number of GFETs that remain …
Adhesion Of Two-Dimensional Titanium Carbides (Mxenes) And Graphene To Silicon, Yanxiao Li, Shuohan Huang, Congjie Wei, Chenglin Wu, Vadym Mochalin
Adhesion Of Two-Dimensional Titanium Carbides (Mxenes) And Graphene To Silicon, Yanxiao Li, Shuohan Huang, Congjie Wei, Chenglin Wu, Vadym Mochalin
Civil, Architectural and Environmental Engineering Faculty Research & Creative Works
Two-dimensional transition metal carbides (MXenes) have attracted a great interest of the research community as a relatively recently discovered large class of materials with unique electronic and optical properties. Understanding of adhesion between MXenes and various substrates is critically important for MXene device fabrication and performance. We report results of direct atomic force microscopy (AFM) measurements of adhesion of two MXenes (Ti3C2Tx and Ti2CTx) with a SiO2 coated Si spherical tip. The Maugis-Dugdale theory was applied to convert the AFM measured adhesion force to adhesion energy, while taking into account …
Coupling Topological Insulator Snsb2te4 Nanodots With Highly Doped Graphene For High-Rate Energy Storage, Zhibin Wu, Gemeng Liang, Wei Kong Pang, Tengfei Zhou, Zhenxiang Cheng, Wenchao Zhang, Ye Liu, Bernt Johannessen, Zaiping Guo
Coupling Topological Insulator Snsb2te4 Nanodots With Highly Doped Graphene For High-Rate Energy Storage, Zhibin Wu, Gemeng Liang, Wei Kong Pang, Tengfei Zhou, Zhenxiang Cheng, Wenchao Zhang, Ye Liu, Bernt Johannessen, Zaiping Guo
Australian Institute for Innovative Materials - Papers
Topological insulators have spurred worldwide interest, but their advantageous properties have scarcely been explored in terms of electrochemical energy storage, and their high-rate capability and long-term cycling stability still remain a significant challenge to harvest. p-Type topological insulator SnSb2Te4 nanodots anchoring on few-layered graphene (SnSb2Te4/G) are synthesized as a stable anode for high-rate lithium-ion batteries and potassium-ion batteries through a ball-milling method. These SnSb2Te4/G composite electrodes show ultralong cycle lifespan (478 mAh g−1 at 1 A g−1 after 1000 cycles) and excellent rate capability (remaining 373 mAh g−1 even at 10 A g−1) in Li-ion storage owing to the rapid …