Engineering Commons^™

Plasma-Assisted Liquid Phase Epitaxy Of Gallium Nitride Using Molten Gallium., Daniel Felipe Jaramillo-Cabanzo

Electronic Theses and Dissertations

Next generation semiconductor materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC) are rapidly replacing Silicon (Si) for high power and high frequency applications due to Si’s inherent limitations. Despite the advantages of GaN over SiC, adoption of GaN has been hindered due to the lack of a cost-effective bulk production technique. Thus, the inability to precure native substrates requires GaN-based architectures to be heteroepitaxially synthesized on non-native substrates, such as sapphire and even SiC. This research seeks to develop a cost effective and scalable method to produce low defect, bulk GaN encouraging the adoption of GaN based devices …