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Open Access. Powered by Scholars. Published by Universities.®

2011

Bipolar transistors

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Full-Text Articles in Engineering

Reliability Study Of Ingap/Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization, Modeling And Simulation, Xiang Liu Jan 2011

Reliability Study Of Ingap/Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization, Modeling And Simulation, Xiang Liu

Electronic Theses and Dissertations

Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high fT and fmax as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to …