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Full-Text Articles in Engineering
Anatomy Of A Nanoscale Conduction Channel Reveals The Mechanism Of A High-Performance Memristor, Feng Miao, John Strachan, Jianhua Yang, M Zhang, Ilan Goldfarb, Antonio Torrezan, Peter Eschbach, Ronald Kelley, Gilberto Medeiros-Ribeiro, R Stanley Williams
Anatomy Of A Nanoscale Conduction Channel Reveals The Mechanism Of A High-Performance Memristor, Feng Miao, John Strachan, Jianhua Yang, M Zhang, Ilan Goldfarb, Antonio Torrezan, Peter Eschbach, Ronald Kelley, Gilberto Medeiros-Ribeiro, R Stanley Williams
Electrical and Computer Engineering Faculty Publication Series
By employing a precise method for locating and directlyimaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta2O5 is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.