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Full-Text Articles in Engineering
Fabrication Of Fully Isolated Nfets Using Oxidized Porous Silicon, A Chadwick, K D. Hirschman
Fabrication Of Fully Isolated Nfets Using Oxidized Porous Silicon, A Chadwick, K D. Hirschman
Journal of the Microelectronic Engineering Conference
SOl (Silicon on Insulator) technology is an option in improving device performance as smaller devices run into scaling challenges. The devices for this study were fabricated using a FIPOS (Fully Isolated Porous Oxidized Silicon) process, which results in localized SOl active regions. The oxidation of electrochemically etched porous silicon (PSi) has demonstrated success in the formation of device quality localized S01 for CMOS applications 11,21. The formation of PSi can be done selectively by controlling the Fermi level in areas to be etched or not etched, which is typically done by adjusting the level of doping Ill. An alternative method …
Fabrication Of Fully Isolated Nfets Using Oxidized Porous Silicon, A Chadwick, K D. Hirschman
Fabrication Of Fully Isolated Nfets Using Oxidized Porous Silicon, A Chadwick, K D. Hirschman
Journal of the Microelectronic Engineering Conference
SOI (Silicon on Insulator) technology is an option in improving device performance as smaller devices run into scaling challenges. The devices for this study were fabricated using a FIPOS (Fully Isolated Porous Oxidized Silicon) process, which results in localized SOJ active regions. The oxidation of electrochemically etched porous silicon (PSi) has demonstrated success in the formation of device quality localized SOl for CMOS applications [1,2]. The formation of PSi can be done selectively by controlling the Fermi level in areas to be etched or not etched, which is typically (lone by adjusting the level of (loping [1]. An alternative method …
Gapless Insulator And A Band Gap Scaling Law In Semihydrogenated Graphene, Anthony Wright, T E. O'Brien, Chao Zhang, Dieter Beaven
Gapless Insulator And A Band Gap Scaling Law In Semihydrogenated Graphene, Anthony Wright, T E. O'Brien, Chao Zhang, Dieter Beaven
Faculty of Engineering - Papers (Archive)
We demonstrate two unusual electronic properties of semihydrogenated graphene with variable sized A- or B-hydrogenated domains within the tight-binding formalism as follows: (i) a universal band gap scaling law which states that the band gap depends linearly upon the ratio of the number of A- to B-hydrogenated atoms, NA/NB, reaching zero gap at NA = NB, but independent of the domain size, and (ii) an insulating state with zero band gap at NA = NB, a rare phenomenon in nature. We confirm this gapless insulator state by the zero …