Open Access. Powered by Scholars. Published by Universities.®
- Institution
- Publication
Articles 1 - 2 of 2
Full-Text Articles in Engineering
1.05 Ghz Mems Oscillator Based On Lateral-Field-Excited Piezoelectric Aln Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
1.05 Ghz Mems Oscillator Based On Lateral-Field-Excited Piezoelectric Aln Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of a 1.05 GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric Aluminum Nitride (AlN) contour-mode resonators. The oscillator shows a phase noise level of –81 dBc/Hz at 1 kHz offset frequency and a phase noise floor of –146 dBc/Hz, which satisfies the GSM requirements of Ultra High Frequency (UHF) local oscillators (LO). The circuit was fabricated in the AMIS 0.5 μm CMOS process, with the oscillator core consuming only 3.5 mW static power. A simple two-mask process was used to fabricate the LFE AlN resonators from 843 MHz to 1.64 GHz with …
Multi-Frequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Multi-Frequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Nipun Sinha
This paper reports on the first demonstration of multi-frequency (176, 222, 307, and 482 MHz) oscillators based on piezoelectric AlN contour-mode MEMS resonators. All the oscillators show phase noise values between –88 and –68 dBc/Hz at 1 kHz offset and phase noise floors as low as –160 dBc/Hz at 1 MHz offset. The same Pierce circuit design is employed to sustain oscillations at the 4 different frequencies, while the oscillator core consumes at most 10 mW. The AlN resonators are currently wirebonded to the integrated circuit realized in the AMIS 0.5 μm 5 V CMOS process. This work constitutes a …