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Articles 1 - 6 of 6
Full-Text Articles in Engineering
Piezoelectric Aluminum Nitride Nanoelectromechanical Actuators, Nipun Sinha, Graham Wabiszewski, Rashed Mahameed, Valery Felmetsger, Shawn Tanner, Robert Carpick, Gianluca Piazza
Piezoelectric Aluminum Nitride Nanoelectromechanical Actuators, Nipun Sinha, Graham Wabiszewski, Rashed Mahameed, Valery Felmetsger, Shawn Tanner, Robert Carpick, Gianluca Piazza
Nipun Sinha
This letter reports the implementation of ultrathin (100 nm) aluminum nitride (AlN) piezoelectric layers for the fabrication of vertically deflecting nanoactuators. The films exhibit an average piezoelectric coefficient (d31~−1.9 pC/N), which is comparable to its microscale counterpart. This allows vertical deflections as large as 40 nm from 18 µm long and 350 nm thick multilayer cantilever bimorph beams with 2 V actuation. Furthermore, in-plane stress and stress gradients have been simultaneously controlled. The films exhibit leakage currents lower than 2 nA/cm2 at 1 V, and have an average relative dielectric constant of approximately 9.2 (as in thicker films). These material …
Gravimetric Chemical Sensor Based On The Direct Integration Of Swnts On Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chiara Zuniga, Nipun Sinha, Marzie Taheri, Samuel M. Khamis, Alan T. Johnson, Gianluca Piazza
Gravimetric Chemical Sensor Based On The Direct Integration Of Swnts On Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chiara Zuniga, Nipun Sinha, Marzie Taheri, Samuel M. Khamis, Alan T. Johnson, Gianluca Piazza
Nipun Sinha
This paper reports on the first demonstration of a gravimetric chemical sensor based on direct integration of Single Wall Carbon Nanotubes (SWNTs) grown by Chemical Vapor Deposition (CVD) on AlN Contour-Mode MicroElectroMechanical (MEMS) resonators. In this first prototype the ability of SWNTs to readily adsorb volatile organic chemicals has been combined with the capability of AlN Contour-Mode MEMS resonator to provide for different levels of sensitivity due to separate frequencies of operation on the same die. Two devices with resonance frequencies of 287 MHz and 442 MHz have been exposed to different concentrations of DMMP in the range from 80 …
Multi-Frequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Multi-Frequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Nipun Sinha
This paper reports on the first demonstration of multi-frequency (176, 222, 307, and 482 MHz) oscillators based on piezoelectric AlN contour-mode MEMS resonators. All the oscillators show phase noise values between –88 and –68 dBc/Hz at 1 kHz offset and phase noise floors as low as –160 dBc/Hz at 1 MHz offset. The same Pierce circuit design is employed to sustain oscillations at the 4 different frequencies, while the oscillator core consumes at most 10 mW. The AlN resonators are currently wirebonded to the integrated circuit realized in the AMIS 0.5 μm 5 V CMOS process. This work constitutes a …
Integration Of Aln Micromechanical Contour-Mode Technology Filters With Three-Finger Dual Beam Aln Mems Switches, Nipun Sinha, Rashed Mahameed, Chengjie Zuo, Gianluca Piazza
Integration Of Aln Micromechanical Contour-Mode Technology Filters With Three-Finger Dual Beam Aln Mems Switches, Nipun Sinha, Rashed Mahameed, Chengjie Zuo, Gianluca Piazza
Nipun Sinha
In this paper, we present the first demonstration of the monolithic integration of Aluminum Nitride (AlN) micromechanical contour mode technology filters with dual-beam actuated MEMS AlN switches. This integration has lead to the development of the first prototype of a fully-integrated all-mechanical switchable filter. Integration has been demonstrated by using AlN contour-mode MEMS filters at two center frequencies, i.e. 98.7 and 279.9 MHz. The micromechanical switch design used here is a novel three-finger dual-beam topology that improves the isolation and insertion loss of the switch by decreasing the parasitic coupling between the DC and RF signals over a previous AlN …
Body-Biased Complementary Logic Implemented Using Aln Piezoelectric Mems Switches, Nipun Sinha, Timothy S. Jones, Zhijun Guo, Gianluca Piazza
Body-Biased Complementary Logic Implemented Using Aln Piezoelectric Mems Switches, Nipun Sinha, Timothy S. Jones, Zhijun Guo, Gianluca Piazza
Nipun Sinha
This paper reports on the first implementation of low voltage complementary logic (< 1.5 V) by using body-biased aluminum nitride (AlN) piezoelectric MEMS switches. For the first time, by using opposite body biases the same mechanical switch has been made to operate as both an n-type and p-type (complementary) device. Body-biasing also gives the ability to precisely tune the threshold voltage of a switch. The AlN MEMS switches have shown extremely small subthreshold slopes and threshold voltages as low as 0.8 mV/dec and 30 mV, respectively. Furthermore, this work presents a fully mechanical body-biased inverter formed by two AlN MEMS switches operating at 100 Hz with a ± 1.5 V voltage swing.
Ultra Thin Aln Piezoelectric Nano-Actuators, Nipun Sinha, Graham E. Wabiszewski, Rashed Mahameed, Valery V. Felmetsger, Shawn M. Tanner, Robert W. Carpick, Gianluca Piazza
Ultra Thin Aln Piezoelectric Nano-Actuators, Nipun Sinha, Graham E. Wabiszewski, Rashed Mahameed, Valery V. Felmetsger, Shawn M. Tanner, Robert W. Carpick, Gianluca Piazza
Nipun Sinha
This paper reports the first implementation of ultra thin (100 nm) Aluminum Nitride (AlN) piezoelectric layers for the fabrication of vertically deflecting nano-actuators. An average piezoelectric coefficient (d31~ 1.9 pC/N) that is comparable to its microscale counterpart has been demonstrated in nanoscale thin AlN films. Vertical deflections as large as 40 nm have been obtained in 18 μm long and 350 nm thick cantilever beams under bimorph actuation with 2 V. Furthermore, in-plane stress and stress gradients have been simultaneously controlled. Leakage current lower than 2 nA/cm2 at 1 V has been recorded and an average relative dielectric constant of …