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Articles 1 - 22 of 22
Full-Text Articles in Engineering
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Matteo Rinaldi
This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) Super High Frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ …
Power Handling And Related Frequency Scaling Advantages In Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Matteo Rinaldi, Gianluca Piazza
Power Handling And Related Frequency Scaling Advantages In Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Matteo Rinaldi, Gianluca Piazza
Matteo Rinaldi
This paper reports on the analytical modeling and experimental verification of the mechanically-limited power handling and nonlinearity in piezoelectric aluminum nitride (AlN) contour-mode resonators (CMR) having different electrode configurations (thickness field excitation, lateral field excitation, one-port and two-port configurations) and operating at different frequencies (177-3047 MHz). Despite its simplicity, the one-dimensional analytical model fits the experimental behavior of AlN CMRs in terms of power handling capabilities. The model and experiment also confirm the advantage of scaling (i.e. miniaturizing) the AlN CMRs to higher frequencies at which higher critical power density can be more easily attained up to values in excess …
Modeling And Computer Simulation Of Fault Calculations For Transmission Lines, Dr. Adel A. Elbaset
Modeling And Computer Simulation Of Fault Calculations For Transmission Lines, Dr. Adel A. Elbaset
Dr. Adel A. Elbaset
Calculation of transmission line faults has a fundamental importance in the fault detection, classification, and location determination of faults in transmission line. This paper presents a proposed computer program based on Matlab software to calculate all ten types of shunt faults that may occur in a transmission line. Various fault scenarios (fault types, fault locations and fault impedance) are considered in this paper. The inputs of the proposed program are line length, source voltage, positive, negative and zero sequence for source impedance, line charging, and transmission line impedance. The output of the algorithm is used to train an artificial intelligence …
Comparative Evaluation Of Pid Voltage Mode, Pi Current Mode, Fuzzy And Pwm Based Sliding Mode Control For Dc-Dc Converters, Omar Ellabban, Joeri Van Mierlo
Comparative Evaluation Of Pid Voltage Mode, Pi Current Mode, Fuzzy And Pwm Based Sliding Mode Control For Dc-Dc Converters, Omar Ellabban, Joeri Van Mierlo
Omar Ellabban
This paper presents a comparison between the application of four control techniques in DC-DC converters. PID voltage mode (PID-VM), PI current mode (PI-CM), fuzzy, and PWM based sliding mode (SM) controllers are applied to buck converter. The design procedures of controllers are reviewed. The dynamic performance of these controllers under star-up, steady state, input voltage variation, load current disturbances and EMI spectrum are presented and compared.
Power Handling And Related Frequency Scaling Advantages In Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Matteo Rinaldi, Gianluca Piazza
Power Handling And Related Frequency Scaling Advantages In Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Matteo Rinaldi, Gianluca Piazza
Matteo Rinaldi
This paper reports on the analytical modeling and experimental verification of the mechanically-limited power handling and nonlinearity in piezoelectric aluminum nitride (AlN) contour-mode resonators (CMR) having different electrode configurations (thickness field excitation, lateral field excitation, one-port and two-port configurations) and operating at different frequencies (177-3047 MHz). Despite its simplicity, the one-dimensional analytical model fits the experimental behavior of AlN CMRs in terms of power handling capabilities. The model and experiment also confirm the advantage of scaling (i.e. miniaturizing) the AlN CMRs to higher frequencies at which higher critical power density can be more easily attained up to values in excess …
Piezoelectric Aluminum Nitride Nanoelectromechanical Actuators, Nipun Sinha, Graham Wabiszewski, Rashed Mahameed, Valery Felmetsger, Shawn Tanner, Robert Carpick, Gianluca Piazza
Piezoelectric Aluminum Nitride Nanoelectromechanical Actuators, Nipun Sinha, Graham Wabiszewski, Rashed Mahameed, Valery Felmetsger, Shawn Tanner, Robert Carpick, Gianluca Piazza
Nipun Sinha
This letter reports the implementation of ultrathin (100 nm) aluminum nitride (AlN) piezoelectric layers for the fabrication of vertically deflecting nanoactuators. The films exhibit an average piezoelectric coefficient (d31~−1.9 pC/N), which is comparable to its microscale counterpart. This allows vertical deflections as large as 40 nm from 18 µm long and 350 nm thick multilayer cantilever bimorph beams with 2 V actuation. Furthermore, in-plane stress and stress gradients have been simultaneously controlled. The films exhibit leakage currents lower than 2 nA/cm2 at 1 V, and have an average relative dielectric constant of approximately 9.2 (as in thicker films). These material …
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Matteo Rinaldi
This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) Super High Frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ …
A Review On Load Flow Studies, Dr. Adel A. Elbaset
A Review On Load Flow Studies, Dr. Adel A. Elbaset
Dr. Adel A. Elbaset
No abstract provided.
Controlled Islanding Scheme For Power Systems, Dr. Adel A. Elbaset
Controlled Islanding Scheme For Power Systems, Dr. Adel A. Elbaset
Dr. Adel A. Elbaset
No abstract provided.
Dna-Decorated Carbon Nanotubes As Sensitive Layer For Aln Contour-Mode Resonant-Mems Gravimetric Sensor, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, Timothy S. Jones, A T. Johnson, Gianluca Piazza
Dna-Decorated Carbon Nanotubes As Sensitive Layer For Aln Contour-Mode Resonant-Mems Gravimetric Sensor, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, Timothy S. Jones, A T. Johnson, Gianluca Piazza
Matteo Rinaldi
In this work a nano-enabled gravimetric chemical sensor prototype based on single-stranded DNA (ss-DNA) decorated single-walled carbon nanotubes (SWNT) as nano-functionalization layer for Aluminun Nitride (AIN) contour-mode resonant-MEMS gravimetric sensors has been demonstrated. Two resonators fabricated on the same silicon chip and operating at different resonance frequencies, 287 and 450 MHz, were functionalized with this novel bio-coating layer to experimentally prove the capability of two distinct single strands of DNA bound to SWNT to enhance differently the adsorption of volatile organic compounds such as dinitroluene (DNT, simulant for explosive vapor) and dymethyl-methylphosphonate (DMMP, a simulant for nerve agent sarin). The …
Seminar In Kumamoto University, 11-6-2009 (Protection), Dr. Adel A. Elbaset
Seminar In Kumamoto University, 11-6-2009 (Protection), Dr. Adel A. Elbaset
Dr. Adel A. Elbaset
This Seminar about a Novel protective scheme for Transmission line Presented by me in Kumamoto University, Graduate School of Science and Technology, Japan at 11-6-2009.
Nanoenabled Microelectromechanical Sensor For Volatile Organic Chemical Detection, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, A. T. Johnson, Gianluca Piazza
Nanoenabled Microelectromechanical Sensor For Volatile Organic Chemical Detection, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, A. T. Johnson, Gianluca Piazza
Matteo Rinaldi
A nanoenabled gravimetric chemical sensor prototype based on the large scale integration of single-stranded DNA (ss-DNA) decorated single-walled carbon nanotubes (SWNTs) as nanofunctionalization layer for aluminum nitride contour-mode resonant microelectromechanical (MEM) gravimetric sensors has been demonstrated. The capability of two distinct single strands of DNA bound to SWNTs to enhance differently the adsorption of volatile organic compounds such as dinitroluene (simulant for explosive vapor) and dymethyl-methylphosphonate (simulant for nerve agent sarin) has been verified experimentally. Different levels of sensitivity (17.3 and 28 KHz µm^2/fg) due to separate frequencies of operation (287 and 450 MHz) on the same die have also …
5-10 Ghz Aln Contour-Mode Nanoelectromechanical Resonators, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza
5-10 Ghz Aln Contour-Mode Nanoelectromechanical Resonators, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza
Matteo Rinaldi
This paper reports on the design and experimental verification of Super High Frequency (SHF) laterally vibrating NanoElctroMechanical (NEMS) resonators. For the first time, AlN piezoelectric nanoresonators with multiple frequencies of operation ranging between 5 and 10 GHz have been fabricated on the same chip and attained the highest f-Q product (4.6E12 Hz) ever reported in AlN contour-mode devices. These piezoelectric NEMS resonators are the first of their class to demonstrate on-chip sensing and actuation of nanostructures without the need of cumbersome or power consuming excitation and readout systems. Effective piezoelectric activity has been demonstrated in thin AlN films having vertical …
Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza
Matteo Rinaldi
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) Super High Frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contour-extensional mode of vibration in nano features of an ultra-thin (250 nm) Aluminum Nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt2, in excess of …
Electric Energy Sector In Egypt: A Review, Dr. Adel A. Elbaset
Electric Energy Sector In Egypt: A Review, Dr. Adel A. Elbaset
Dr. Adel A. Elbaset
No abstract provided.
Gravimetric Chemical Sensor Based On The Direct Integration Of Swnts On Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chiara Zuniga, Nipun Sinha, Marzie Taheri, Samuel M. Khamis, Alan T. Johnson, Gianluca Piazza
Gravimetric Chemical Sensor Based On The Direct Integration Of Swnts On Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chiara Zuniga, Nipun Sinha, Marzie Taheri, Samuel M. Khamis, Alan T. Johnson, Gianluca Piazza
Nipun Sinha
This paper reports on the first demonstration of a gravimetric chemical sensor based on direct integration of Single Wall Carbon Nanotubes (SWNTs) grown by Chemical Vapor Deposition (CVD) on AlN Contour-Mode MicroElectroMechanical (MEMS) resonators. In this first prototype the ability of SWNTs to readily adsorb volatile organic chemicals has been combined with the capability of AlN Contour-Mode MEMS resonator to provide for different levels of sensitivity due to separate frequencies of operation on the same die. Two devices with resonance frequencies of 287 MHz and 442 MHz have been exposed to different concentrations of DMMP in the range from 80 …
Multi-Frequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Multi-Frequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Nipun Sinha
This paper reports on the first demonstration of multi-frequency (176, 222, 307, and 482 MHz) oscillators based on piezoelectric AlN contour-mode MEMS resonators. All the oscillators show phase noise values between –88 and –68 dBc/Hz at 1 kHz offset and phase noise floors as low as –160 dBc/Hz at 1 MHz offset. The same Pierce circuit design is employed to sustain oscillations at the 4 different frequencies, while the oscillator core consumes at most 10 mW. The AlN resonators are currently wirebonded to the integrated circuit realized in the AMIS 0.5 μm 5 V CMOS process. This work constitutes a …
Optimal Design Of Wind-Pv-Diesel-Battery System Using Genetic Algorithm, Dr. Adel A. Elbaset
Optimal Design Of Wind-Pv-Diesel-Battery System Using Genetic Algorithm, Dr. Adel A. Elbaset
Dr. Adel A. Elbaset
The optimization of diesel generators (DGs) and renewable energy sources have to be done within a cost benefit, high reliability and environmentally friendly framework. Most of optimization method just consider only from economical point of view. This paper presents complete optimization method involving of cost, reliability and pollutant emission into optimization process. The reliability level is analyzed using basic probabilistic concept in order to find loss of load probability (LOLP). This value is then used to determine the customer damage cost due to electricity interruption. Meanwhile, CO2 emission as an indicator of pollution is calculated to determine the annual emission …
Integration Of Aln Micromechanical Contour-Mode Technology Filters With Three-Finger Dual Beam Aln Mems Switches, Nipun Sinha, Rashed Mahameed, Chengjie Zuo, Gianluca Piazza
Integration Of Aln Micromechanical Contour-Mode Technology Filters With Three-Finger Dual Beam Aln Mems Switches, Nipun Sinha, Rashed Mahameed, Chengjie Zuo, Gianluca Piazza
Nipun Sinha
In this paper, we present the first demonstration of the monolithic integration of Aluminum Nitride (AlN) micromechanical contour mode technology filters with dual-beam actuated MEMS AlN switches. This integration has lead to the development of the first prototype of a fully-integrated all-mechanical switchable filter. Integration has been demonstrated by using AlN contour-mode MEMS filters at two center frequencies, i.e. 98.7 and 279.9 MHz. The micromechanical switch design used here is a novel three-finger dual-beam topology that improves the isolation and insertion loss of the switch by decreasing the parasitic coupling between the DC and RF signals over a previous AlN …
Body-Biased Complementary Logic Implemented Using Aln Piezoelectric Mems Switches, Nipun Sinha, Timothy S. Jones, Zhijun Guo, Gianluca Piazza
Body-Biased Complementary Logic Implemented Using Aln Piezoelectric Mems Switches, Nipun Sinha, Timothy S. Jones, Zhijun Guo, Gianluca Piazza
Nipun Sinha
This paper reports on the first implementation of low voltage complementary logic (< 1.5 V) by using body-biased aluminum nitride (AlN) piezoelectric MEMS switches. For the first time, by using opposite body biases the same mechanical switch has been made to operate as both an n-type and p-type (complementary) device. Body-biasing also gives the ability to precisely tune the threshold voltage of a switch. The AlN MEMS switches have shown extremely small subthreshold slopes and threshold voltages as low as 0.8 mV/dec and 30 mV, respectively. Furthermore, this work presents a fully mechanical body-biased inverter formed by two AlN MEMS switches operating at 100 Hz with a ± 1.5 V voltage swing.
Ultra Thin Aln Piezoelectric Nano-Actuators, Nipun Sinha, Graham E. Wabiszewski, Rashed Mahameed, Valery V. Felmetsger, Shawn M. Tanner, Robert W. Carpick, Gianluca Piazza
Ultra Thin Aln Piezoelectric Nano-Actuators, Nipun Sinha, Graham E. Wabiszewski, Rashed Mahameed, Valery V. Felmetsger, Shawn M. Tanner, Robert W. Carpick, Gianluca Piazza
Nipun Sinha
This paper reports the first implementation of ultra thin (100 nm) Aluminum Nitride (AlN) piezoelectric layers for the fabrication of vertically deflecting nano-actuators. An average piezoelectric coefficient (d31~ 1.9 pC/N) that is comparable to its microscale counterpart has been demonstrated in nanoscale thin AlN films. Vertical deflections as large as 40 nm have been obtained in 18 μm long and 350 nm thick cantilever beams under bimorph actuation with 2 V. Furthermore, in-plane stress and stress gradients have been simultaneously controlled. Leakage current lower than 2 nA/cm2 at 1 V has been recorded and an average relative dielectric constant of …
Vlsi Implementation Of High Resolution High Speed Low Latency Pipeline Floating Point Adder/Subtractor For Fft Applications, Rozita Teymourzadeh, Burhan Yeop Majlis, Mok Vh, Masuri Othman
Vlsi Implementation Of High Resolution High Speed Low Latency Pipeline Floating Point Adder/Subtractor For Fft Applications, Rozita Teymourzadeh, Burhan Yeop Majlis, Mok Vh, Masuri Othman
Dr. Rozita Teymourzadeh, CEng.