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Improved Ferroelectric Properties In Multiferroic Bifeo3 Thin Films Through La And Nb Codoping, Zhenxiang Cheng, Xiaolin Wang, S X. Dou, Hideo Kimura, Kiyoshi Ozawa
Improved Ferroelectric Properties In Multiferroic Bifeo3 Thin Films Through La And Nb Codoping, Zhenxiang Cheng, Xiaolin Wang, S X. Dou, Hideo Kimura, Kiyoshi Ozawa
Australian Institute for Innovative Materials - Papers
We report the significant improvement of the ferroelectric properties of BiFeO3thin film through control of electrical leakage by Nb doping. A very large remanent electrical polarization value of 80 µC/cm2 was observed in Bi0.8La0.2Nb0.01Fe0.99O3 thin film on Pt/Ti/SiO2/Si substrate. The doping effect of Nb in reducing the movable charge density due to oxygen vacancies in BiFeO3 was confirmed by the dielectric measurements. A very small loss was observed in the Nb and La codoped BiFeO3 thin film. As well as the improvement in the …
La And Nb Codoped Bifeo3 Multiferroic Thin Films On Lanio3/Si And Iro2/Si Substrates, Zhenxiang Cheng, Xiaolin Wang, Hideo Kimura, Kiyoshi Ozawa, S X. Dou
La And Nb Codoped Bifeo3 Multiferroic Thin Films On Lanio3/Si And Iro2/Si Substrates, Zhenxiang Cheng, Xiaolin Wang, Hideo Kimura, Kiyoshi Ozawa, S X. Dou
Australian Institute for Innovative Materials - Papers
Nb and La codoped BiFeO3 thin films were fabricated on oxide bottom electrodes, LaNiO3/Si and IrO2/Si, by pulsed laser deposition method. The doped BiFeO3 thin film capacitor on LaNiO3showed a remnant polarization of more than 75 µC/cm2 in a saturated hysteresis loop. The same La and Nb codoped BiFeO3 thin film capacitors on IrO2 showed a larger remnant polarization, while with a significant contribution from the leakage current. Furthermore, the doped BiFeO3 capacitor on the LaNiO3 bottom electrode showed worse fatigue resistance than the film on IrO …