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Full-Text Articles in Engineering

A Self-Consistent Transport Model For Molecular Conduction Based On Extended Hückel Theory With Full Three-Dimensional Electrostatics, Eric Polizzi, S. Datta, L. Siddiqui, A. Ghosh, M. Paulsson, F. Zahid Aug 2005

A Self-Consistent Transport Model For Molecular Conduction Based On Extended Hückel Theory With Full Three-Dimensional Electrostatics, Eric Polizzi, S. Datta, L. Siddiqui, A. Ghosh, M. Paulsson, F. Zahid

Eric Polizzi

We present a transport model for molecular conduction involving an extended Hückel theoretical treatment of the molecular chemistry combined with a nonequilibrium Green’s function treatment of quantum transport. The self-consistent potential is approximated by CNDO (complete neglect of differential overlap) method and the electrostatic effects of metallic leads (bias and image charges) are included through a three-dimensional finite element method. This allows us to capture spatial details of the electrostatic potential profile, including effects of charging, screening, and complicated electrode configurations employing only a single adjustable parameter to locate the Fermi energy. As this model is based on semiempirical methods …


A Theoretical Investigation Of Surface Roughness Scattering In Silicon Nanowire Transistors, Eric Polizzi, M. Lundstrom, S. Datta, A. Ghosh, J. Wang Jul 2005

A Theoretical Investigation Of Surface Roughness Scattering In Silicon Nanowire Transistors, Eric Polizzi, M. Lundstrom, S. Datta, A. Ghosh, J. Wang

Eric Polizzi

Using a full three-dimensional (3D), quantum transport simulator, we theoretically investigate the effects of surface roughness scattering (SRS) on the device characteristics of Si nanowire transistors (SNWTs). The microscopic structure of the Si/SiO2 interface roughness is directly treated by using a 3D finite element technique. The results show that (1) SRS reduces the electron density of states in the channel, which increases the SNWT threshold voltage, and (2) the SRS in SNWTs becomes less effective when fewer propagating modes are occupied, which implies that SRS is less important in small-diameter SNWTs with few modes conducting than in planar metal-oxide-semiconductor field-effect-transistors …


Energy Efficient Broadcast In Wireless Ad Hoc Networks With Hitch-Hiking, M Agarwal, Lx Gao, Jh Cho, J Wu Jan 2005

Energy Efficient Broadcast In Wireless Ad Hoc Networks With Hitch-Hiking, M Agarwal, Lx Gao, Jh Cho, J Wu

Lixin Gao

No abstract provided.


The Monitoring And Early Detection Of Internet Worms, Cc Zou, Wb Gong, D Towsley, Lx Gao Jan 2005

The Monitoring And Early Detection Of Internet Worms, Cc Zou, Wb Gong, D Towsley, Lx Gao

Lixin Gao

No abstract provided.