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Full-Text Articles in Engineering
Process Design, Development, Fabrication And Verification Of A Cmos Technology For Rit, Jeremiah L. Hebding
Process Design, Development, Fabrication And Verification Of A Cmos Technology For Rit, Jeremiah L. Hebding
Journal of the Microelectronic Engineering Conference
The motivation in creation of the Strongarm process flow was to create a robust “enabling” process that was easy to manufacture. Optimum process conditions have been determined through extensive SUPREM simulation. Electrical examination using ATLAS software allowed for parameter extraction of the computer-generated devices. Modeling the extracted parameters with standard device physics equations allowed for a SPICE level-2 analysis that could be verified through electrical testing of actual fabricated devices. The technology was designed for a two micron, twin-well process incorporating a 4Onm gate oxide and an N+ poly gate. Source and drain implants are at 2E15 cm2, …
Moving Rit To Submicron Technology: Fabrication Of 0.5Μm P-Channel Mos Transistors, Lisa M. Camp
Moving Rit To Submicron Technology: Fabrication Of 0.5Μm P-Channel Mos Transistors, Lisa M. Camp
Journal of the Microelectronic Engineering Conference
In this investigation, efforts have been made to move the Microelectronic Engineering Program at Rochester Institute of Technology to the next technology node by developing and fabricating a 0.5μm PMOS process. Currently, RIT is fabricating 1.0μm CMOS devices. A successful 0.5μm PMOS process can be incorporated into a full flow 0.5μm CMOS process. Both process and electrical simulations were done in order to predict performance. Key process features include blanket n-well, LOCOS isolation, 15nm gate oxide, i-line lithography, self-aligned source and drain, P+ doped polysilicon gates, and shallow source and drains. A test chip was created and the fabrication process …
Design And Fabrication Of Finfets On Soi Substrates, Steven D. Kirby
Design And Fabrication Of Finfets On Soi Substrates, Steven D. Kirby
Journal of the Microelectronic Engineering Conference
A Fin Field Effect Transistor (FinFET) is one of several novel devices that may be used in the future to minimize short channel effects. The FinFET is fabricated on silicon on insulator (SOI) substrate and uses basic integrated circuit processing techniques to obtain a double gate structure. The double gate structure helps to improve subthreshold characteristics and provides low leakage current. The objective of this project was to improve the FinFET device built at RIT. Functioning FinFETs were designed and fabricated previously at RIT. The new design and process changes will help in the understanding of issues found in previous …
Design, Simulation And Fabrication Of Insulated Gate Bipolar Transistors (Igbt), Tejas K. Jhaveri
Design, Simulation And Fabrication Of Insulated Gate Bipolar Transistors (Igbt), Tejas K. Jhaveri
Journal of the Microelectronic Engineering Conference
This project serves as a study to determine the feasibility of the current CMOS toolsets and processes available at Semiconductor & Microsystems Fabrication Laboratory (SMFL) for the fabrication of whole wafer power devices. Several designs and devices were explored. The Insulated Gate Bipolar Transistor (~LGBT) is a device widely used for high power electronic applications and was selected for this study. This device has bipolar current flow and a MOS gate thus combining advantages of both the Double diffused MOS (DMOS) and Power Bipolar junction transistor. Prototypes consisting of transistors with varying densities, gate lengths and gate widths were fabricated …