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Full-Text Articles in Engineering
Controlled-Stress Large-Area Pulsed Laser Deposition Of Yttria Stabilized Zirconia, Paul C. Rounsavall
Controlled-Stress Large-Area Pulsed Laser Deposition Of Yttria Stabilized Zirconia, Paul C. Rounsavall
Theses and Dissertations
The US Air Force has need of parabolic-shaped membrane mirrors for surveillance satellites. The current polymer membrane technology has been unable to overcome shape deformation problems caused by intrinsic stresses from the membrane casting and mounting processes. One proposed solution was to coat the membrane mirrors with a stressed coating to compensate for shape deformations. Thus, the research presented in this dissertation produced controlled-stress large-area pulsed laser deposition (PLD) grown thin films on polymer substrates and investigated optical time-of-flight (TOF) sensor systems and Raman spectroscopy for control for the PLD process with respect to thin film stress. Initially, the PLD-grown …
Electrical Activation Studies Of Silicon Implanted Alx Gal-X N And Coimplanted Gan, Elizabeth A. Chitwood
Electrical Activation Studies Of Silicon Implanted Alx Gal-X N And Coimplanted Gan, Elizabeth A. Chitwood
Theses and Dissertations
A comprehensive study of the electrical activation of silicon implanted AlxGa1-xN was performed as a function ion dose, anneal temperature, and aluminum mole fraction, Also, GaN coimplanted with silicon and nitrogen was investigated. Room temperature Hall effect measurements were used to determine carrier concentration and mobility. All the samples had a 500 Å encapsulant of AlN, and were implanted at room temperature with 200 keV silicon ions at doses ranging from 1x1013 to 1x1015 /sq cm. The GaN was also implanted with nitrogen under the same conditions in doses of 9x1012 to 9x10 …
Luminescence Studies Of Ion-Implanted Gallium Nitride And Aluminum Gallium Nitride, Erin N. Claunch
Luminescence Studies Of Ion-Implanted Gallium Nitride And Aluminum Gallium Nitride, Erin N. Claunch
Theses and Dissertations
Recently, research on the wide bandgap semiconductors such as GaN and Al(x)Ga(1-x)N became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted AlxGa1-xN, Mg doped GaN, and Si+N implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature.