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Experimental Ion Implantation System For Decaborane Ions, Vijay Babaram

Theses

Future generations of Si technology will require ultra shallow junctions (tens of nm) in the drain and source regions of MOS transistors. Fabrication of such shallow p-type junctions requires implantation of boron at ultra low energies (< 1 keV), below the limits of standard ion implantation technology. A proposed solution involves implantation of B₁₀H_x⁺ ions in which boron atoms carry less than 10% of the beam energy.

This thesis is a part of the feasibility study of this new technology. An experimental ion implantation system was designed and built at Ion Beam and Thin Film Lab, NJIT. The system was tested and the mass analyzing magnet was calibrated using argon ions. Decaborane ions, …