Engineering Commons^™

Electric Field Mapping System With Nanosecond Temporal Rosolution, F. E. Peterkin, R. Block, K. H. Schoenbach

Bioelectrics Publications

The electric field dependence of the absorption coefficient in semi‐insulating GaAs at the absorption edge was measured in a high‐voltage pulsed experiment. Pulse duration was kept below 50 ns in order to avoid thermal effects. A GaAs laser diode was used as a probe light source with wavelength varied from 902 to 911 nm. For fields up to 40 kV/cm the absorption coefficient increased from 3 to 17 cm⁻¹ at 902 nm, with smaller absolute increases evident at the longer wavelengths. Calculation from theory was consistent with this behavior. The spatial variation of the electric field was also recorded …