Open Access. Powered by Scholars. Published by Universities.®
- Publication
Articles 1 - 3 of 3
Full-Text Articles in Engineering
Investigation Of Paraelectric Ptl Thin Films Using Reactive Magnetron Sputtering, Hyun Hoo Kim
Investigation Of Paraelectric Ptl Thin Films Using Reactive Magnetron Sputtering, Hyun Hoo Kim
Dissertations
The study of methods to prepare paraelectric perovskite PLT (Pb1-xLaxTi1-x/4O3; x=0.28) thin films has been important because thin films of this high dielectric strength material are required to make high density capacitors for dynamic random access memory. In this research, paraelectric PLT thin films were prepared on multi-layer (Pt/Ti/SiO2/Si) and MgO substrates in a unique way by the reactive magnetron sputtering method using a multi-component metal target. The individual control of each metal area on the sputtering target had considerable influence on the stoichiometry and electrical properties of the thin …
A Novel Beam-Assisted Thickness Measurement Technique For Nanostructures, Luis Manual Casas
A Novel Beam-Assisted Thickness Measurement Technique For Nanostructures, Luis Manual Casas
Theses
A novel method for measuring thickness of thin films has been developed. This method is straightforward, quickly accomplished, and offers resolution of device layers approaching that given by transmission electron microscopy. Ion beam bombardment of a multi-layer structure forms a crater in which the crater sidewalls are beveled at a very shallow angle, revealing various layers within the sample at a high degree of magnification. Beveled film thicknesses are measured by scanning Auger electron spectroscopy. Depth profilometry is used to measure the shallow beveling angle. Through knowledge of the beveled layer thickness and the bevel angle, actual film thicknesses are …
Fabrication And Characterization Of Wsi2/P-Si And Tasi2/P-Si Devices, Anitha Kodali
Fabrication And Characterization Of Wsi2/P-Si And Tasi2/P-Si Devices, Anitha Kodali
Theses
Thin films Silicides of Tungsten and Tantalum have become very important for IC manufacturing. W and TaSi2 films were deposited on silicon substrates by CVD and Co-sputtering techniques respectively. These films have been characterized using current-voltage technique. The analysis of the obtained experimental measurements has been performed in the light of Schottky-Mott theory. The effects of annealing were studied using Rapid Thermal Processing technique in the temperature range of 500 to 700°C, in nitrogen atmosphere at a constant pressure of 5x10-6 ton for a duration of 30 seconds.The increase in annealing temperature resulted in the formation of ohmic …